RF-noise modeling in MOSFETs: excess noise, symmetry, and causality
Smit G.D.J., Scholten A.J., Pijper R.M.T., Tiemeijer L.F., van der Toorn R., Klaassen D.B.M., Scheer P., Juge A., NXP Semiconductors, NL
Modeling of RF-noise in MOSFET channels is one of the cornerstones for RF-CMOS-circuit design. Deep sub-micron technology nodes necessitate a proper treatment of excess noise as well as detailed modeling of parasitics. In addition, demanding [...]