Drain Induced Barrier Lowering (DIBL) Effect on the Intrinsic Capacitances of Nano-Scale MOSFETs
Karim M.A., Venugopalan S., Chauhan Y.S., Lu D., Niknejad A., Hu C., University of California at Berkeley, US
MOSFET intrinsic capacitances going negative is a major concern in the compact model community. Negative Intrinsic Capacitances (NIC) can raise non-convergence issues in circuit simulators. In some cases NICs can be explained using physical phenomena. [...]