nanowire – Page 3 – TechConnect Briefs

Atomic scale dopant detection in an individual silicon nanowire by atom probe tomography

Chen W-H, Lardé R., Cadel E., Xu T., Grandidier B., Nys J.P., Pareige P., Groupe de Physique des Matériaux, FR

The atom probe tomography is a three-dimensional high resolution analytical microscope that can map the distribution of atoms in semiconductor materials such as silicon nanowires.

Individual SiGe Nanowire Chemical Composition Depth Profiling and Surface Oxidation Analyzed by Auger Electron Spectroscopy

Hammond J.S., Givan U., Paul D., Patolsky F., Physical Electronics USA, US

The lateral and depth distributions of the surface oxidation and the surface Phosphorous doping concentrations have been measured from an individual SixGe(1-x) 60 nm diameter nanowire with Auger Electron Spectroscopy combined with sputter ion depth [...]

A Simple, Accurate Capacitance-Voltage Model of Undoped Silicon Nanowire MOSFETs

Lin S., Zhou X., See G.H., Zhu G., Wei C., Zhang J., Chen Z., Nanyang Technological University, SG

Gate-All-Around (GAA), or surrounding-gate, MOSFET is one of the most promising structures beyond bulk CMOS. In this paper, we present a simple, accurate C-V model of undoped silicon nanowire MOSFETs. Different with other models, proposed [...]

Analytical Modelling of Ballistic and Quasi-Ballistic Nanowires:Validation and Application to CMOS Architecture

Martinie S., Munteanu D., Le Carval G., Jaud M-A, Autran J-L, CEA/LETI/MINATEC, FR

We present here an unified analytic model for ballistic and quasi-ballistic Silicon Nanowire (SNW represented in figure 1). Starting from the classical flux method and using the Lundstrom/Natori approaches [1-2], we enhanced them by taking [...]

An Analytic Model of the Silicon-Based Nanowire Schottky Barrier MOSFET

Che Y., Zhang L., Zhou X., He J., Chan M., Peking University, CN

In this paper, an analytic model of the Silicon-based Nanowire Schottky-Barrier MOSFETs is developed based on the 2D solution of body potential together with the WKB tunneling theory. The proposed model predicts the electrical characteristics [...]

Gallium Nitride Nanowire Enhanced High Intensity Discharge Luminance System

Tsai J.T.H., Liao Z.-J., Tatung University, TW

We produce an mercury-free, high efficiency HID lamp with the GaN nanostructure enhancer embedded. These dense GaN nanowires embedded into the HID electrodes can reduce 25% of ignition voltage and enhance the 17% of efficiency [...]

Subthreshold Operation of Schottky Barrier Silicon Nanowire FET

Yoo S.K., Ahn J.Y., Yang S., Lee J-H., Gwangju Institute of Science & Technology (GIST), KR

This paper presents that the sensitivity of Schottky barrier silicon nanowires FET (SB-SiNWFET) is strongly modulated by the applied back gate voltage, and reveals that the operation in the subthreshold regime gives the significant enhancement [...]

The Study of Mechanical Stress in NEMS Heterostructures

Xu X., Bogdan B., Lime F., Grenoble institute of technology, FR

Mechanical stress is increasingly applied in microelectronics. For instance, strained silicon technology is widely used to improve carrier mobility and driver current for advanced MOS transistors. For micro-electromechanical systems, piezoresistive effects are widely used in [...]

Functional nanowire microscopy tip

Kim J., Shin Y-H, Yun J.H., Han C-S, Hyun M.S., Korea Institute of Machinery and Materials (KIMM), KR

Excellent electric conductive nickel silicide (NiSi) nanowire (NW) was aligned on a conventional Si tip and performed as an electric force microscopy (EFM) probe. Single crystalline structured NiSi NW was grown in plasma-enhanced chemical vapor [...]

Synthesis and characterization of polypyrrole nanowires using alternating amphiphilic copolymer nanotubes as templates

Chan A.S.W., Groves M., Malardier-Jugroot C., Royal Military College of Canada, CA

It has been reported that poly(styrene-alt-maleic anhydride) (SMA) chains would self-assembled into a nanotube in aqueous solution at pH7 by associating through a linear conformation which favours the association of the chains by decreasing the [...]