MOSFET modeling – TechConnect Briefs

Interrelations between Threshold Voltage Definitions and Extraction Methods

Schneider M.C., Galup-Montoro C., Machado M.B., Cunha A.I.A., Federal University of Santa Catarina, BR

This paper presents a brief discussion on the main MOSFET threshold voltage definitions available in the literature as well as on associated extraction methodologies. In order to compare these definitions and methodologies, we take advantage [...]

DC and AC Symmetry Tests for MOSFET Models

McAndrew C.C., Freescale Semiconductor, US

Symmetry around Vds=0 is a critical requirement forMOSFET models, e.g. as it affects the ability of a model tosimulate accurately distortion for some RF CMOS mixers.The Gummel Symmetry Test is, until now, the standardtest used [...]

Physical Modeling of Substrate Resistance in RF MOSFETs

Han J., Je M., Shin H., Korea Advanced Institute of Science & Technology, KR

A simple and accurate method is presented for extracting the substrate resistance of RF MOSFETs. The extraction results for 0.18 um MOSFETs are shown for various bias conditions. The dependence of the extracted substrate resistances [...]

Advanced MOSFET Modeling for RF IC Design

Cheng Y., Skyworks Solutions, US

In this paper, advanced MOSFET modeling for radiofrequency (RF) integrated-circuit (IC) design is discussed. An introduction of the basics of RF modeling of MOSFET is given first. A simple sub-circuit model is then presented with [...]

A Study of Figures of Merit for the High Frequency Behavior of MOSFETs in RF IC Applications

Cheng Y., Siliconlinx, US

This paper is to review important device parameters as the figures of merit (FOM) to understand the device characteristics for analog/RF applications. These FOM should be characterized and evaluated in technology development and model generation [...]