GaN – Page 2 – TechConnect Briefs

Single-crystalline 3C-SiC thin-film on large Si substrate for photonic applications

Massoubre D., Wang L., Chai J., Walker G., Hold L., Lobino M., Dimitriev S., Iacopi A., Griffith University, AU

We present our recent progress in the hetero-epitaxial growth of single-crystalline cubic silicon carbide (3C-SiC) on large silicon (Si) wafer and its use for photonic applications. Single-crystalline 3C-SiC thin-film on Si opens new opportunities to [...]

Simulation of Back-Electrode Effects on Lags and Current Collapse in Field-Plate AlGaN/GaN HEMTs

Horio K., Onodera H., Fukai T., Shibaura Institute of Technology, JP

Two-dimensional transient analysis of gate-field-plate AlGaN/GaN high electron mobility transistors with a backside electrode is performed by considering a deep donor and a deep acceptor in a buffer layer. Effects of introducing a field plate [...]

Single resonator GaN/Si SAW based temperature sensor

Muller A., Konstantinidis G., Dinescu A., Stefanescu A., Cismaru A., Buiculescu V., Giangu I., Stavrinidis A., Stavrinidis G., Stavrinidis A., Stavrinidis G., IMT-Bucharest, RO

The use of GaN based SAW type sensors has a major advantage for temperature measurements in GaN MMICs because of the possibility of monolithic integration of the temperature sensor and the possibility to place the [...]

Analysis of GaN Grown on Vertically Standing Fractal-Like Si Nanostructures

Wee Q.X., Soh C.B., Zang K.Y., Chua S.J., Thompson C.V., National University of Singapore (NUS), SG

We have investigated the microstructure and optical properties of GaN grown on vertically standing Si nanostructures by MOCVD. The Si nanostructures array is formed by a simple metal-assisted etching of Si(111) substrates, where both metal [...]

Simulation of Surface and Buffer Trapping Effects on Gate Lag in AlGaN/GaN HEMTs

Horio K., Nakajima A., Fujii K., Shibaura Institute of Technology, JP

Two-dimensional simulation of turn-on characteristics of AlGaN/GaN HEMTs is performed in which both buffer traps and sur-face states are considered. It is studied how the so-called gate lag is affected by these factors. It is [...]

Size dependent photoluminescence characteristics of GaN nanoparticles

Chen Y., Kang K.S., Jyoti N., Kim J., Inha University, KR

Various size of GaN nanoparticles have been fabricated with sol-gel method using Ga(NO3)3 as a presusor, HNO3 as a solvent, NH3OH as a pH adjusting agent, and citric acid as a chelating agent. After adding [...]

Plasmonic Enhancement in InGaN/GaN MQW System with Au Nanoparticles

Llopis A., Lin J., Neogi A., Pereira S.M.S., University of North Texas, US

In this article we report experimental evidence of plasmon based enhancement of an InGaN/GaN MQW system using Au nanocrystals. Enhancement of the main peak along with a blue-shift and change in the angle dependent PL [...]

Simulation of Field-Plate Effects on Lag and Current Collapse in GaN-based FETs

Itagaki K., Nakajima A., Horio K., Shibaura Institute of Technology, JP

Two-dimensional transient analyses of field-plate GaN MESFETs and AlGaN/GaN HEMTs with a semi-insulating buffer layer have been performed in which a deep donor and a deep acceptor are considered in the buffer layer. Quasi-pulsed I-V [...]

A Kinetic Study of the MOCVD of GaN

Moscatelli D., Cavallotti C., Politecnico di Milano, IT

Quantum chemistry investigations have been performed to study the gas phase chemistry active during the MOVPE of GaN when Ga(CH3)3 and NH3, diluted in a H2 carrier gas, are used as precursors. Optimized molecular geometries, [...]

Nano-Scale Effects in GaN-based Light-Emitting Diodes

Piprek J., Nakamura S., University of California, US

We here investigate the effects of built-in polarization on the properties of non-symmetric InGaN quantum wells. The impact of these nano-scale effects on the performance of blue light emitting diodes is analyzed utilizing advanced numerical [...]