Nano-Scale Effects in GaN-based Light-Emitting Diodes

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We here investigate the effects of built-in polarization on the properties of non-symmetric InGaN quantum wells. The impact of these nano-scale effects on the performance of blue light emitting diodes is analyzed utilizing advanced numerical simulation.

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Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: March 7, 2004
Pages: 15 - 17
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topics: Photonic Materials & Devices
ISBN: 0-9728422-9-2