field plate – TechConnect Briefs

Analysis of Lag Phenomena and Current Collapse in Field-Plate AlGaN/GaN HEMTs with High-k Passivation Layer

Komoto K., Saito Y., Horio K., Shibaura Institute of Technology, JP

In AlGaN/GaN HEMTs, slow current transients are often observed even if the gate voltage or the drain voltage is changed abruptly. This is called gate lag or drain lag, and problematic in circuits applications. The [...]

Analysis of Breakdown Characteristics in Field-Plate AlGaN/GaN HEMTs: Dependence on Deep-Acceptor Density in Buffer Layer

Akiyama S., Kondo M., Wada L., Horio K., Shibaura Institute of Technology, JP

We make a two-dimensional analysis of field-plate AlGaN/GaN HEMTs with a Fe-doped semi-insulating buffer layer, and studied how the deep-acceptor density in the buffer layer NDA and the field-plate length LFP affect the breakdown voltage [...]

Analysis of Gate-Length Dependence of Lags and Current Collapse in Field-Plate AlGaN/GaN HEMTs

Chiba T., Saito Y., Tsurumaki R., Horio K., Shibaura Institute of Technology, JP

We make 2-D transient simulations of field-plate AlGaN/GaN HEMTs with a semi-insulating buffer layer, where a deep acceptor above the midgap is considered. We particularly study how the gate lag, drain lag and current collapse [...]

Analysis of Breakdown Characteristics of Field-Plate AlGaN/GaN HEMTs with a High-k Passivation Layer

Kabemura T., Hanawa H., Horio K., Shibaura Institute of Technology, JP

It is well known that the introduction of field plate increases the breakdown voltage of AlGaN/GaN HEMTs. This is because the electric field at the drain edge of the gate is reduced. As another way [...]

Reduction in Lags and Current Collapse in Field-Plate AlGaN/GaN HEMTs with High Acceptor Density in a Buffer Layer

Saito Y., Tsurumaki R., Noda N., Horio K., Shibaura Institute of Technology, JP

We make a two-dimensional transient analysis of field-plate AlGaN/GaN HEMTs with a semi-insulating buffer layer, where a deep acceptor above the midgap is considered. It is studied how the deep-acceptor density and the field plate [...]

Simulation of Lags and Current Collapse in Field-Plate AlGaN/GaN HEMTs with Different Types of Buffer Layers

Tsurumaki R., Noda N., Horio K., Shibaura Institute of Technology, JP

In AlGaN/GaN HEMTs, slow current transients are often observed even if the gate voltage VG or the drain voltage VD is changed abruptly. This is called gate lag or drain lag, and is problematic for [...]

Simulation of Current Slump Removal in Field-Plate GaAs MESFETs with a Thin Passivation Layer

Nomoto A., Sato Y., Horio K., Shibaura Institute of Technology, JP

In compound semiconductor FETs, slow current transients are often observed even if the drain voltage VD or the gate voltage VG is changed abruptly [1]. This is called drain lag or gate lag, and undesirable [...]

Simulation of Lags and Current Collapse in Field-Plate AlGaN/GaN HEMTs with Deep Acceptors in a Buffer Layer

Noda N., Horio K., Shibaura Institute of Technology, JP

Two-dimensional transient analysis of field-plate AlGaN/GaN HEMTs is performed in which a deep acceptor is considered in a semi-insulating buffer layer, and quasi-pulsed current-voltage curves are derived from them. It is studied how the existence [...]

Simulation of Current Slump Removal in Field-Plate GaAs MESFETs

Nomoto A., Satoh Y., Horio K., Shibaura Institute of Technology, JP

Two-dimensional transient analysis of field-plate GaAs MESFETs is performed by considering surface states in the region from the gate toward the drain. Quasi-pulsed current-voltage curves are derived from the transient characteristics. It is shown that [...]

Analysis of Breakdown Characteristics in Gate and Source Field-Plate AlGaN/GaN HEMTs

Onodera H., Hanawa H., Horio K., Shibaura Institute of Technology, JP

AlGaN/GaN HEMTs are now receiving great attention because of their applications to high-power microwave devices. It is known that the introduction of field plate enhances the power performance of AlGaN/GaN HEMTs, because the off-state breakdown [...]