FET – TechConnect Briefs

Integration of SiNWs on MOSFET Gate terminal: From device fabrication to electrical characterization

Taghinejad H., Taghinejad M., Taghinejad H., Taghinejad M., Saeedi A., Abdolahd M., Mohajerzadeh S., University of Tehran, IR

Nanostructured materials provide unique features that could not be achieved in bulk constructions. silicon nanowires (SiNWs) due to the exclusive controllable physical and electrical properties as well as established growth methods are most appealing ones. [...]

A Numerical Study on THZ-Wave Generation and Detection of Metal-Oxide-Semiconductor Field-effect Transistor

Wang C., Mou X., He H., He J., Ye Y., He H., He J., Cao Y., PKU-HKUST Shenzhen-Hongkong Institution, CN

A numerical method is developed in this paper to simulate FET-based THz wave generation and detection. The method is derived directly from the hydrodynamic equations and implemented in Matlab coding. Simulation results are compared with [...]

Inverter Circuits Based on Low-Temperature Solution-Processed ZnO Nanoparticle Thin-Film Transistors

Wolff K., Vidor F.F., Hilleringmann U., University of Paderborn, DE

Promising enhancement-load inverter cuircuits using bottom-gated ZnO nanoparticle thin-film transistors and a poly(4-vinylphenol) (PVP) dielectric are demonstrated. The deposition of the ZnO active layer is done by spin coating of a colloidal dispersion. Due to [...]

Jet-printed Si nanowires for flexible backplane applications

Wong W.S., Raychaudhuri S., Sambandan S., Lujan R., Street R.A., Palo Alto Research Center, US

The integration of Si nanowire (Si NW) materials with low-temperature plastic substrates can enhance the performance of low-cost flexible electronics. We report the properties of Si NW field-effect transistors (FETs) fabricated with various contact metals [...]

Simulation of Decrease in Lag phenomena and Current Slump of Field-Plate GaAs FETs

Itagaki K., Ueda H., Terao Y., Horio K., Shibaura Institute of Technology, JP

Two-dimensional transient analysis of field-plate GaAs MESFETs is performed in which a deep donor “EL2” and a shallow acceptor are considered in a semi-insulating substrate, and the results are compared between the two cases with [...]

Subthreshold Operation of Schottky Barrier Silicon Nanowire FET

Yoo S.K., Ahn J.Y., Yang S., Lee J-H., Gwangju Institute of Science & Technology (GIST), KR

This paper presents that the sensitivity of Schottky barrier silicon nanowires FET (SB-SiNWFET) is strongly modulated by the applied back gate voltage, and reveals that the operation in the subthreshold regime gives the significant enhancement [...]

Quantum Dot Gate InGaAs FETs

Jain F., Suarez E., Gogna M., Chan P-Y., Karmakar S., Fikiet J., Miller B., Heller E., University of Connecticut, US

This paper describes using wide energy gap lattice-matched II-VI layers, such as ZnSeTe- ZnMgSeTe, serving as a high-k gate dielectric for n-channel enhancement mode InGaAs field effect transistors (FETs). The thrust is to reduce interface [...]

Solution-processed ZnO Single Nanoparticle Transistor Using Water-based Dispersions

Wolff K., Hilleringmann U., University of Paderborn, DE

The integration of printable transistors is an issue of recent work. Different proposals base on ZnO nanoparticle inks, which have to undergo a post-deposition annealing in order to improve the film quality and burn away [...]

Simulation of Field-Plate Effects on Lag and Current Collapse in GaN-based FETs

Itagaki K., Nakajima A., Horio K., Shibaura Institute of Technology, JP

Two-dimensional transient analyses of field-plate GaN MESFETs and AlGaN/GaN HEMTs with a semi-insulating buffer layer have been performed in which a deep donor and a deep acceptor are considered in the buffer layer. Quasi-pulsed I-V [...]

Silicon Nanoparticles contacted by metal nanogaps for FET applications

Wolff K., Hilleringmann U., University of Paderborn, DE

A low-cost and simple fabrication technique is proposed to prepare a bottom-gate FET applying nanoparticles of silicon (nc-Si). Nanoparticles were contacted by metal nanogaps and characterised subsequently. Conclusions of contacting incorporated into further approaches of [...]