diffusion – Page 4 – TechConnect Briefs

Boron Diffusion and Activation in Silicon in the Presence of Other Species

Li H-J., Kohli P., Ganguly S., Kirichenko T.A., Zeitzoff P., Torres K., Banerjee S., Univ. of Texas Austin, US

Modeling and experimental investigation of B equilibrium diffusivity and its activation in Si in the presence of other species, including ab initio calculations, are presented here. The results suggest that incorporating other species along with [...]

Atomistic Modeling of Arsenic Diffusion and Activation

Dunham S., Fastenko P., Qin Z., Henkelman G., University of Washington, US

Understanding the diffusion and activation of arsenic is critical for the formation of low resistance ultra-shallow junctions as required for nanoscale MOS devices. In this work, we combine the results of ab-initio calculations with continuum [...]

Effect of Stress on Dopant Diffusion in Si

Daw M.S., Windl W., Laudon M., Clemson University, US

We present a theoretical treatment of the effect of stress on dopant and defect diffusion in Si. A prior treatment [P.H. Dederichs and K. Schroeder, Phys. Rev. B 17, 2524 (1978)] of vacancy diffusion in [...]

Systematic Global Calibration of a Process Simulator

Lee J-H., Lee S-W., Kim K-D., Kim Y-W., Kong J-T., Lee J-H., Lee S-W., Kim K-D., Kim Y-W., Baek D-H., Samsung Electronics Co.Ltd., KR

This paper proposes a novel methodology of systematic global calibration of a process simulator and validates its accuracy and efficiency with application to memory and logic devices. With 175 SIMS profiles which cover the whole [...]

Linking of Atomistic Modeling to Macroscopic Behavior for Front End Processes

Dunham S.T., Boston University, US

In this work, we review efforts to make effective use of atomistic calculations for the advancement of VLSI process simulation. We focus on front-end processes such as defect mediated dopant diffusion which play a large [...]

A Program for Modeling of Technological Routes of VLSI Fabrication – ProMIC-T

Tesluk V., Korbetskyy O., Lvov Polytechnic, UA

A technological process of the VLSI fabrication constantly improves. In such conditions, new technology and constructive problems appear when making IC with submicron sizes. Decision for these problems is possible only by using CAD tools, [...]

From Layout to System Simulation: An Example of an Oxygen Sensor

Camon H., Djafari-Rouhani M., Gué A.M., Dilhan M., Alonso C., Jammes B., LAAS/CNRS, FR

The development of microsystems has shown that the technologies and tools are mature enough to investigate the possibilities of complete CAD tools, as is the case in integrated circuit design. An oxygen sensor has been [...]