Boron Diffusion and Activation in Silicon in the Presence of Other Species

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Modeling and experimental investigation of B equilibrium diffusivity and its activation in Si in the presence of other species, including ab initio calculations, are presented here. The results suggest that incorporating other species along with B into the Si substrate can achieve shallower junctions and higher B activation in semiconductor device applications.

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Journal: TechConnect Briefs
Volume: 2, Technical Proceedings of the 2001 International Conference on Computational Nanoscience and Nanotechnology
Published: March 19, 2001
Pages: 108 - 111
Industry sector: Advanced Materials & Manufacturing
Topic: Informatics, Modeling & Simulation
ISBN: 0-9708275-3-9