device modeling – Page 2 – TechConnect Briefs

MOSFET Analytical Inversion Charge Model with Quantum Effects using a Triangular Potential Well Approximation

Abebe H., Cumberbatch E.C., Tyree V., Morris H.C., USC/ISI MOSIS, US

The eigenfunctions from solutions of the Schrödinger equation for a triangular potential well are the Airy functions. The triangular potential approximation has been shown to be a good approximation for the charge density when the [...]

Analytical Surface Potential Model with Polysilicon Gate Depletion Effect for NMOS

Cumberbatch E., Abebe H., Morris H., Tyree V., USC/ISI MOSIS, US

Different modeling approaches for the sub-100nm MOSFET are discussed in [1] and the surface potential description model is reported to be promising, [1, 2]. Surface potential changes impact gate capacitance and current-voltage (I-V) characteristics of [...]

Failure of Macroscopic Transport Models in Nanoscale Devices near Equilibrium

Jungemann C., Grasser T., Meinerzhagen B., Technische Universität Braunschweig, DE

The shrinking of the device dimensions below 100nm is pushing the classical TCAD tools like the drift-diffusion (DD) or hydrodynamic (HD) models to their limits. While the impact of the shrinking on the accuracy of [...]

Atomistic Process and Simulation in the Regime of sub-50nm Gate Length

Kwon O., Kim K., Seo J., Won T., Inha University, KR

In this paper, we report an atomistic simulation approach for sub-50nm gate length FETs. The proposed atomistic approach consists of the coupling the molecular dynamics (MD) simulations of the collision cascades for ion implantation process [...]

Full-band Particle-based Simulation of Germanium-On-Insulator FETs

Beysserie S., Branlard J., Aboud S., Goodnick S.M., Thornton T., Saraniti M., Illinois Institute of Technology, US

We model and simulate novel fully depleted (FD) sub-50nm gate lengths MOSFET structures using a full-band particle simulator based on the Cellular Monte Carlo (CMC) method that provides an accurate transport model at the high [...]

Spectral Analysis of Channel Noise in Nanoscale MOSFETS

Casinovi G., Georgia Institute of Technology, US

This paper describes an algorithm for numerical computation of the power spectral density (PSD) of channel noise in nanoscale MOSFETs. Noise generation phenomena inside the channel are modeled as random processes, represented by distributed sources [...]

The New Approach to the Power Semiconductor Devices Modelling

Starzak L., Zubert M., Napieralski A., Technical University of Lodz, PL

Due to their specific structures the power devices need special models different from those developed for low power electronics. The development of such special models is far from being simple as distributed nature of phenomena [...]

Modeling Semiconductor Optical Devices

Sartoris G., ETH-EPFL, CH

n this article, numerical methods for modeling photonic devices having coupled electrical and optical fields are presented. The governing equations characterizing the problem are presented as well as algorithms for computing numerical solutions. The coupling [...]