device – TechConnect Briefs

A Novel Device for In-Vitro Electromagnetic Modulation

Eckert B., Truong H., Kim H., Izadjoo M., Trideum Biosciences and ChiScan, US

Our in-vitro experiments with cold plasma discharge have demonstrated frequency dependent modulation effects. If a large number of cold plasma discharges with different modulation frequencies can be generated at the same time, the time required [...]

Electroluminescence of ZnO Nanowire/p-GaN Heterojunction Light Emitting Diodes

Wang X., Cole J.J., Jacobs H.O., University of Minnesota, US

ZnO nanowire/p-GaN heterojunction light emitting diodes (LEDs) were fabricated by growing ZnO nanowire vertical arrays in aqueous solution on Mg-doped p-GaN films. Diode-like, rectifying I-V characteristics were recorded at room temperature and a “current crowding” [...]

Nanoelectronic Devices Constructed Using Individual Vertically Aligned Carbon Nanofibers

Yang X., Austin D.W., Guillorn M.A., Merkulov V.I., Melechko A.V, Lowndes D.H., Simpson M.L., Oak Ridge National Laboratory, US

We are fabricating active nanoscale electronic devices based on Vertically Aligned Carbon Nanofibers (VACNF). VACNFs are synthesized in a high-density Plasma-Enhanced Chemical Vapor Deposition (PECVD) process that provides a high degree of control of the [...]

Standardization of Compact Device moding in High Level Description Language

Lemaitre L., McAndrew C., Grabinski W., Motorola, CH

This paper proposes a methodology based on hardware description languages (HDL) to efficiently develop compact device models. After an introduction to compact device modeling we describe Verilog-AMS, a popular HDL. Then we show how Verilog-AMS [...]

A Physical Compact MOSFET Mobility Model Including Accurate Calculation of Saturation Surface Potential

Benson J., D’Halleweyn N.V., Mistry K., Redman-White W., University of Southampton, UK

This paper describes a MOSFET vertical mobility model that has been implemented in a surface potential based compact model [1]. The main scattering mechanisms (surface roughness, phonon, and Coulomb) are accounted for using an expression [...]

A New Compact Model of Floating Gate Non-Volatile Memory Cells

Larcher L., Pavan P., Gattel F., Albani L., Marmiroli A., Università di Modena e Reggio Emilia, IT

This paper presents a new compact model of Floating Gate Non-Volatile Memory Cells using SPICE circuit elements. It features many advantages compared to previous models: it is simple and easy to implement and to update, [...]

Partial-Element Equivalent-Circuit Model Simulation for Designing RF-Wireless Communication Products with Embedded Passive Components

Smith W.R., National Semiconductor Corporation, US

Rapidly increasing functionality and performance of RF/wireless communication products, along with mandated decreases in size, weight, and cost, have created a critical need to replace discrete, surface-mounted passive circuit components with embedded passives in substrate [...]

Rational RSM Models for Device Characteristics as Functions of Process Parameters

Granik Y., Moroz V., PDF Solutions, Inc., US

Conventional polynomial Response Surface Methodology (RSM) fails to provide oscillation-free analytical models for some device data with singularity like subthreshold slope vs threshold adjustment dose, poly gate length vs stepper defocus, etc. New type of [...]