Unified Regional Approach to Consistent and Symmetric DC/AC Modeling of Deep-Submicron MOSFETs
Zhou X., Chiah S.B., Chandrasekaran K., Lim K.Y., Chan L., Chandrasekaran K., Chu S., Nanyang Technological University, SG
This paper presents our new developments of Xsim, a unified regional threshold-voltage-based model for deepsubmicron MOSFETs. New features include complete reformulation with bulk reference, including transverse electric field for effective mobility resulting in source–drain symmetry, [...]