deep acceptor – TechConnect Briefs

Analysis of High Average Breakdown Fields between Gate and Drain in AlGaN/GaN HEMTs with High-k Passivation Layer

Tomita R., Ueda S., Kawada Y., Horio K., Shibaura Institute of Technology, JP

AlGaN/GaN HEMTs are now receiving great interest for application to high-power microwave devices and high power switching devices. To improve the breakdown voltage, the introduction of field plate is shown to be effective, but it [...]

Analysis of Breakdown Voltage of AlGaN/GaN HEMTs with High-k Passivation Layer and High Acceptor Density in Buffer Layer

Ueda S., Tomita R., Kawada Y., Horio K., Shibaura Institute of Technology, JP

AlGaN/GaN HEMTs are now receiving great interest for application to high-power microwave devices and high power switching devices. To improve the breakdown voltage, the introduction of field plate is shown to be effective, but it [...]

Analysis of Breakdown Characteristics in Field-Plate AlGaN/GaN HEMTs: Dependence on Deep-Acceptor Density in Buffer Layer

Akiyama S., Kondo M., Wada L., Horio K., Shibaura Institute of Technology, JP

We make a two-dimensional analysis of field-plate AlGaN/GaN HEMTs with a Fe-doped semi-insulating buffer layer, and studied how the deep-acceptor density in the buffer layer NDA and the field-plate length LFP affect the breakdown voltage [...]

Analysis of Gate-Length Dependence of Lags and Current Collapse in Field-Plate AlGaN/GaN HEMTs

Chiba T., Saito Y., Tsurumaki R., Horio K., Shibaura Institute of Technology, JP

We make 2-D transient simulations of field-plate AlGaN/GaN HEMTs with a semi-insulating buffer layer, where a deep acceptor above the midgap is considered. We particularly study how the gate lag, drain lag and current collapse [...]

Effect of Deep-Acceptor Density in Buffer Layer on Breakdown Voltage of AlGaN/GaN HEMTs with High-k Passivation Layer

Ueda S., Kawada Y., Horio K., Shibaura Institute of Technology, JP

AlGaN/GaN HEMTs are now receiving great interest for application to high-power microwave devices and high power switching devices. To improve the breakdown voltage, the introduction of field plate is shown to be effective, but it [...]

Effects of Buffer Acceptors on Breakdown Voltages of AlGaN/GaN HEMTs with a High-k Passivation Layer

Kawada Y., Hanawa H., Horio K., Shibaura Institute of Technology, JP

AlGaN/GaN HEMTs are now receiving great interest for application to high-power microwave devices and high-power switching devices. However, the breakdown voltage is known to be greatly lower than that theoretically predicted. To improve the breakdown [...]

Simulation of Lags and Current Collapse in Field-Plate AlGaN/GaN HEMTs with Different Types of Buffer Layers

Tsurumaki R., Noda N., Horio K., Shibaura Institute of Technology, JP

In AlGaN/GaN HEMTs, slow current transients are often observed even if the gate voltage VG or the drain voltage VD is changed abruptly. This is called gate lag or drain lag, and is problematic for [...]

Simulation of Lags and Current Collapse in Field-Plate AlGaN/GaN HEMTs with Deep Acceptors in a Buffer Layer

Noda N., Horio K., Shibaura Institute of Technology, JP

Two-dimensional transient analysis of field-plate AlGaN/GaN HEMTs is performed in which a deep acceptor is considered in a semi-insulating buffer layer, and quasi-pulsed current-voltage curves are derived from them. It is studied how the existence [...]