continuous model – TechConnect Briefs

Physical Carrier Mobility in Compact Model of Independent Double Gate MOSFET

Reyboz M., Martin P., Rozeau O., Poiroux T., CEA-LETI, FR

We have already developed an explicit threshold voltage based compact model of independent double gate MOSFET which well works for gate length between 30 nm and 1µm, or more. However, the mobility was assumed constant. [...]

A New Continuous Model for Deep Submicron MOSFETs

Chan K-M.S., Wong N-C.A., Wong S-C., Chao C-J., Kao D-B., Wong N-C.A., Wong S-C., Yang C.Y., Winbond Electronics Corporation America, US

A 1-D model is developed to account for mobile charges in the Source/Drain junction regions of a MOSFET. 2-D effects such as Threshold Roll-off and Drain Induced Barrier Lowering are accounted for with an empirical [...]