CMOS device – TechConnect Briefs

A Framework for Generic Physics Based Double-Gate MOSFET Modeling

Chan M., Taur Y., Lin C.H., He J., Niknejad A., Hu C., Hong Kong University of Science & Technology, HK

This paper presents a framework to develop a generic and physical Double-Gate MOSFET model. Due to limited available physical data and existence of a large variety of device structures, flexibility to assemble model modules to [...]

Quasi-2D Compact Modeling for Double-Gate MOSFET

Chan M., Man T.Y., He J., Xi X., Lin C.H., Lin X., Lin C.H., Lin X., Ko P.K., Niknejad A.M., Hu C., Hong Kong University of Science and Technology, HK

This paper presents an approach to model the characteristics of undoped Double-Gate MOSFETs without relying on the charge-sheet approximation. Due to the extremely thin silicon film used, the inversion charge thickness becomes comparable to the [...]

Quasi-2D Compact Modeling for Double-Gate MOSFET

Chan M., Man T.Y., He J., Xi X., Lin C.H., Lin X., Lin C.H., Lin X., Ko P.K., Niknejad A.M., Hu C., Hong Kong University of Science and Technology, HK

This paper presents an approach to model the characteristics of undoped Double-Gate MOSFETs without relying on the charge-sheet approximation. Due to the extremely thin silicon film used, the inversion charge thickness becomes comparable to the [...]

A Framework for Generic Physics Based Double-Gate MOSFET Modeling

Chan M., Taur Y., Lin C.H., He J., Niknejad A., Hu C., Hong Kong University of Science & Technology, HK

This paper presents a framework to develop a generic and physical Double-Gate MOSFET model. Due to limited available physical data and existence of a large variety of device structures, flexibility to assemble model modules to [...]

Engineering BSIM for the Nano-Technology Era and Beyond

Chan M., Hu C., Hong Kong University of Science and Technology, HK

This paper presents the current status of the forth generation BSIM model and issues of modeling CMOS based devices with nanometer dimensions. Due to the divergence of device structures in sub-0.1 m gate length, it [...]