AlGaN/GaN HEMT – TechConnect Briefs

Compact Model for Intrinsic Capacitances in AlGaN/GaN HEMT Devices

We present a physics-based analytical compact model for intrinsic gate-source and gate-drain capacitances (CGS and CGD) in AlGaN/GaN HEMT these devices. The gate-channel capacitance Cch is derived from the unified 2-DEG charge density model developed [...]

Linearity Performance Enhancement of DMG AlGaN/GaN High Electron Mobility Transistor

Kumar S.P., Agrawal A., Chaujar R., Gupta M., Gupta R.S., Gupta M., Gupta R.S., Semiconductor Device Research Laboratory, IN

HEMTs are promising devices for RF wireless communications. For wireless communication applications and RF circuit design, linearity is always one of the most important issues. This is because the devices used in the system may [...]

Simulation of Buffer-Related Current Slump in AlGaN/GaN HEMTs

Horio K., Shibaura Institute of Technology, JP

Transient simulations of AlGaN/GaN HEMTs are performed in which a three-level compensation model is adopted for a semi-insulating buffer-layer, where a shallow donor, a deep donor and a deep acceptor are considered. Quasi-pulsed I-V curves [...]