A Physics-Based Analytical Surface Potential and Capacitance Model of MOSFET’s Operation from the Accumulation to Depletion Region
A Physics-Based Analytical Surface Potential and Capacitance Model of MOSFETs Operation from Strong Accumulation to Depletion region Jin He*+, Xuemei Xi*, Mansun Chan*, and Chenming Hu* (*Electronics Research Laboratory, Department of Electrical Engineering and Computer [...]