Zhang D. – TechConnect Briefs

Solution processed high Performance thin-film transistors using polymer/SWCNT composite ink

Zhang D., Zhang F., Lv N., Zhang D., Zhang F., Qiu S., Cui Z., Suzhou Institute of Nanotech, Chinese Academy of Sciences, CN

Semiconducting single-walled carbon nanotubes (s-SWCNTs) are increasingly being used for making inks for printed or solution processed thin-film transistors (TFTs) in printed and flexible electronics. However, the inherent insolubility of carbon nanotubes in most organic [...]

Active Pixel CMOS Image Sensor with Single Transistor Architecture

Liang H., Zhang A., Zhang D., Zhang G., Zhang A., Zhang D., Zhang G., He J., Su Y., Zhang A., Zhang D., Zhang G., PKU-HKUST Shenzhen-Hongkong Institution, CN

CMOS active pixel image sensor with single transistor architecture (1T CMOS APS) is proposed in this paper and verified by experiment data. By switching the photo sensing pinned diode, reset and select can be achieved [...]

Preparation and near infrared emission research of YBO3:Ce3+,Yb3+ nanosheets

Wang Y., Hu X., Zhan S., Zhang D., Zhang D., Fan J., Northwest University, CN

Y0.97Ce0.01Yb0.02BO3 nanosheets(a) and micro-rose(b) have the same hexagonal structure, and the intensity of (110) and (100) diffraction peaks of the sample a is stronger than b. Annealing the sample b in different temperature, the higher [...]

Novel first-principle simulations of 3D atomistic structure

Zhang D., Polizzi E., UMass, US

Modeling approaches in computational electronics have become increasingly driven by the need of more fundamental and comprehensive understanding of the nanoscale physics of system only through knowledge of the constituent atoms. First principle calculation, which [...]

Enhanced ferromagnetism and weak polarization of multiferroic BiFeO3 synthesized by sol-gel auto-combustion method

Wang G.M., Xu J.M., Zhang D., China University of Geosciences, CN

BiFeO3 nanoparticles and ceramics were prepared by sol-gel auto-combustion method. Optimal conditions for the synthesis of pure BiFeO3 nanoparticles were experimentally obtained by X-ray diffraction patterns analysis. Scanning electronic microscope was used to investigate microstructure [...]

Linear scaling techniques for first-principle calculations of large nanowire devices

Zhang D., Polizzi E., University of Massachusetts, FR

This paper aims to provide a sound basis to face the challenges in large scale atomistic simulations for applications ranging from material sciences and chemistry to nanoelectronics and bio-nanotechnology. In nanoelectronics, large scale ’ab-initio’ simulations [...]

Novel Nano-metal Polymeric Composites Fabricated via In-Situ Self Assembly

Vargo T.G., Koloski T.S., MacRae D.M., Lucey D.W., Zhang D., Brupbacher J.B., Integument Technologies, Inc., US

Current research in the field of nanotechnology and the fabrication of polymeric composites is often complicated by the inability to obtain well dispersed nano-particles within polymeric matrices. Current methods require that nanoparticles be protected by [...]

Linear and Nonlinear Optical Properties of Palladium Nanoparticle Reinforced Fluoropolymer Composites

Spicer J., See K., Katsumi Y., Zhang D., Brupbacher J., Vargo T., John's Hopkins University, US

The linear optical properties of a functionally graded, palladium nanoparticle reinforced fluorinated ethylene polymer matrix nanocomposite (PMNC) were investigated in this work. Synthesized through repeated infusions of a palladium organometallic precursor gas into an insulating, [...]

Ballistic MOS Model (BMM) Considering Full 2D Quantum Effects

Yu Z., Zhang D., Tian L., Tsinghua University, CN

As the channel length of MOSFETs is shrunk to below 50 nm, 2D quantum mechanical (QM) e®ects becomes profound on both the carrier con¯nement in the transverse direction to the channel and the carrier transport, [...]

A Compact I-V Model for FinFETs Comprising Multi-Dimensional Electrostatics and Quantum Mechanical Effects

Zhang D., Yu Z., Tian L., Tsinghua University, CN

A compact I-V model for FinFET using ballistic transport with 1D electron gas is presented. The 2D electrostatics and 2D quantum mechanical (QM) effects at the cross-section are fully taken into account, which ensures the [...]