Wei C. – TechConnect Briefs

A Simple, Accurate Capacitance-Voltage Model of Undoped Silicon Nanowire MOSFETs

Lin S., Zhou X., See G.H., Zhu G., Wei C., Zhang J., Chen Z., Nanyang Technological University, SG

Gate-All-Around (GAA), or surrounding-gate, MOSFET is one of the most promising structures beyond bulk CMOS. In this paper, we present a simple, accurate C-V model of undoped silicon nanowire MOSFETs. Different with other models, proposed [...]

Compact Model Application to Statistical/Probabilistic Technology Variations

Zhou X., Zhu G., Srikanth M., Selvakumar R., Yan Y., Chandra W., Zhang J., Lin S., Wei C., Chen Z., Nanyang Technological University, SG

ULSI systems are designed by electronic design automation (EDA) tools with performance figures-of-merit (FOM) measured by SPICE circuit simulation, in which nonlinear transistors are modeled by the compact model (CM) with its nominal set of [...]

Unified Regional Surface Potential for Modeling Common-Gate Symmetric/Asymmetric Double-Gate MOSFETs with Any Body Doping

See G.H., Zhou X., Zhu G., Zhu Z., Zhu G., Zhu Z., Lin S., Wei C., Zhang J., Srinivas A., Nanyang Technological University, SG

Double-gate MOSFET is one of the key potential devices to allow further extension of CMOS technology scaling. The compact modeling community faces great challenges to model the physical effects due to the coupling of the [...]

Quasi-2D Surface-Potential Solution to Three-Terminal Undoped Symmetric Double-Gate Schottky-Barrier MOSFETs

Zhu G., Zhu Z., See G.H., Zhou X., Zhu G., Zhu Z., Lin S., Wei C., Zhang J., Srinivas A., Nanyang Technological University, SG

The quasi-2D method has been used to account for short-channel effects in PN-junction MOSFETs. Recently some authors applied the quasi-2D solution to SB MOSFETs to derive potential profiles. In this paper, an improved quasi-2D solution [...]

Unified Regional Surface Potential for Modeling Common-Gate Symmetric/Asymmetric Double-Gate MOSFETs with Quantum-Mechanical Effects

See G.H., Zhou X., Zhu G., Zhu Z., Zhu G., Zhu Z., Lin S., Wei C., Zhang J., Srinivas A., Nanyang Technological University, SG

The quantum mechanical effect (QME) in nanoscale MOSFETs has become more and more important. The quantization of the space charge density in bulk-MOS compact models is usually modeled by the van Dort model with a [...]

New Properties and New Challenges in MOS Compact Modeling

Zhou X., See G.H., Zhu G., Zhu Z., Zhu G., Zhu Z., Lin S., Wei C., Srinivas A., Zhang J., Nanyang Technological University, SG

As bulk-MOS technology is approaching its fundamental limit, non-classical devices such as multiple-gate (MG) and silicon-nanowire (SiNW) transistors emerge as promising candidates for future generation device building blocks. This trend poses new challenges in developing [...]