Watts J.S. – TechConnect Briefs

Modeling MOSFET Process Variation using PSP

Watts J.S., Lee Y.M., Park J-E, IBM, US

The PSP model has been extensively evaluated for it’s abililty accurately match IV and CV characteristics MOSFETs measured on a single die. This enables accurate prediction of circuit behavior for circuits made of transistors which [...]

A Simple Yet Accurate Mismatch Model For Circuit Simulation

Jin Z., Lee Y.M., Watts J.S., Bonaccio A.R., Schroer G.J., Pai N.G., IBM, US

As technology scales, mismatch between a pair of transistors becomes a more and more critical issue for technology development and circuit designs. Scaling also increases the complexity of compact device modeling. Sophisticated models are usually [...]

Modeling Small MOSFETs using Ensemble Devices

Watts J.S., Pino R., Trombley H., IBM, US

This paper discribes methodogy to correctly model small area MOSFETs including paremeter extraction and centering using multiple parallel devices for accurate measurments. The method includes adjusting the measured data to recover true single finger behavior, [...]

Predicting the SOI History Effect Using Compact Models

Na M-H, Watts J.S., Nowak E.J., Williams R.Q., Clark W.F., IBM Corporation, US

A simple and effective compact model methodology that predicts the history effect in silicon-on-insulator (SOI) is discussed. In this study we employ three physical parameters to modify the body-potentials of SOI FETs in an inverter [...]