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HomeAuthorsWang Y.

Authors: Wang Y.

A Homogenous Small Molecule Microarray for Enzymatic Assays

Ma H., Wang Y., Pomaybo A.S., Tsai C., Schmidt S.P., Morewood Molecular Sciences, Inc., US
Small molecule microarray as an emerging technology promises to play a pivotal role in chemical genetics. However, in spite of the fast development of this technology special requirements, such as the immobilization of small molecules [...]

Phase Field Modeling of Dislocation Network Coarsening, Dislocation – Impurity, and Dislocation – Precipitate Interactions

Shen C., Kazaryan A., Anderson P.M., Wang Y., Ohio State University, US
Interactions of dislocations with one another and their interactions with impurities and precipitates determine the behavior of plastic deformation of crystalline materials. In this presentation, we will discuss recent advances in phase field modeling of [...]

Modeling of Joule Heating in Electrophoretic Separation Microchips

Wang Y., Lin Q., Hoburg J.F., Mukherjee T., Carnegie Mellon University, US
This paper presents a model for Joule heating induced analyte dispersion in electrophoretic separation channels with a rectangular cross section. The model is in closed form and captures the effect of cross-sectional geometry. Three-dimensional numerical [...]

Semi-Empirical Approach to Modeling Reverse Short-Channel Effect in Submicron MOSFET’s

Chiah S.B., Zhou X., Lim K.Y., Wang Y., See A., Chan L., Nanyang Technological University, SG
A model for effective channel doping in submicron LDD nMOSFET's is presented by adding the effect of the lateral nonuniform pile-up charge centroid to the Gaussian profile with peak doping near the edge of the [...]

A Velocity-Overshoot Subthreshold Current Model for Deep-Submicrometer MOSFET Devices

Qian W., Zhou X., Wang Y., Lim K.Y., Nanyang Technological University, SG
In this paper, a new theoretical approach to submicrometer MOSFET subthreshold current modeling is presented. The diffusion and drift currents are calculated, respectively. The effect of velocity overshoot on subthreshold current is investigated. Comparison with [...]

Modeling of Threshold Voltage with Reverse Short Channel Effect

Lim K.Y., Zhou X., Wang Y., Nanyang Technological University, SG
This paper presents a new reverse short channel effect (RSCE) model for threshold voltage modeling of submicrometer MOSFETs. Unlike those conventional empirically-based RSCE models, the proposed model is derived and simplified based on two Gaussian [...]

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