Taghinejad H. – TechConnect Briefs

A novel method for realization of nickel silicide nanosheets with advanced morphology and photoemission

Gharooni M., Hosseini M., Talei R., Taghinejad H., Taghinejad M., Taghinejad H., Taghinejad M., Mohajerzadeh S., Abdolahad M., University of Tehran, IR

Morphologically controlled nanostructures have been increasingly important, because of their highly shape dependent physical and chemical properties. Nickel-silicide nanomaterials, due to their wide range of applications, attracted strong attentions. There are some reports on fabrication [...]

Three-Dimensional High-order Nano-rod Formation Using a Hydrogen-assisted Deep Reactive Ion Etching

Soleimani S., Zanganeh S., Azimi S., Sanaee Z., Mohajerzadeh S., Taghinejad H., University of Tehran, IR

We report the formation of three-dimensional nano-sized vertical features on amorphous silicon by means of a hydrogen-assisted deep reactive ion etching. The thickness of amorphous silicon has been varied between 5 and 10 µm. The [...]

Direct Integration of Ni2Si/Si Nanograss Heterojunction Array on the Gate Terminal of N-MOSFET Utilizing a CMOS Compatible Top-Down Technique

Taghinejad H., Taghinejad M., Ganji M., Rostamian A., Taghinejad H., Taghinejad M., Abdolahd M., Mohajerzadeh S., Tghinejad H., University of Tehran, IR

we take advantages of direct integration of Ni2Si/Si nanograss heterojunction array on a MOSFET's gate terminal, utilizing a CMOS compatible top-down technique, to realize a highly sensitive phototransistor. In the proposed technique, using a deep [...]

Metastatic diagnosis of colon cancer by vertically aligned carbon nanotube based electromechanical biosensor

Abdolahad M., Taghinejad H., Taghinejad M., Taghinejad H., Taghinejad M., Janmaleki M., Mohajerzadeh S., University of Tehran, IR

vertically aligned carbon nanotube based electrical biosensor was demonstrated as a more rapid, sensitive and specific device for metastatic diagnosis of colon cancer cells based on the mechanical entrapment of metastatic cancer cells on vertically [...]

Integration of SiNWs on MOSFET Gate terminal: From device fabrication to electrical characterization

Taghinejad H., Taghinejad M., Taghinejad H., Taghinejad M., Saeedi A., Abdolahd M., Mohajerzadeh S., University of Tehran, IR

Nanostructured materials provide unique features that could not be achieved in bulk constructions. silicon nanowires (SiNWs) due to the exclusive controllable physical and electrical properties as well as established growth methods are most appealing ones. [...]