Three-Dimensional High-order Nano-rod Formation Using a Hydrogen-assisted Deep Reactive Ion Etching

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We report the formation of three-dimensional nano-sized vertical features on amorphous silicon by means of a hydrogen-assisted deep reactive ion etching. The thickness of amorphous silicon has been varied between 5 and 10 µm. The adhesion quality of relatively thick amorphous Si films has allowed deep micro and nano-machining features on silicon and glass substrates. Apart from optical photo-lithography, high precision nano-sphere colloidal lithography and electron beam lithography has been exploited to realize ultra-small features on the amorphous silicon. Scanning electron microscopy has been extensively used to study the evolution of three-dimensional features. Such 3-D structures are suitable for future MEMS-based devices on glass and silicon substrates.

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Journal: TechConnect Briefs
Volume: 3, Nanotechnology 2014: Electronics, Manufacturing, Environment, Energy & Water
Published: June 15, 2014
Pages: 190 - 193
Industry sectors: Advanced Materials & Manufacturing | Energy & Sustainability
Topics: Sustainable Materials
ISBN: 978-1-4822-5830-1