Compact Models for sub-22nm MOSFETs
Chauhan Y.S., Lu D., Venugopalan S., Morshed T., Karim M.A., Niknejad A., Hu C., University of California-Berkeley, US
FinFET and UTBSOI FET (or ETSOI) are the two promising multi-gate FET candidates for sub-22nm CMOS technology. BSIM multi-gate FET models (BSIM-CMG and BSIM-IMG) are the surface potential based physical compact models for FinFET and [...]