Morris H. – TechConnect Briefs

Compact Models for Double Gate MOSFET with Quantum Mechanical Effects using Lambert Function

Abebe H., Morris H., Cumberbatch E., Tyree V., University of Southern California, ISI, US

This paper is a continuation of the work we presented in the 2006 IEEE UGIM Proceedings. Iterative compact device models with quantum mechanical effects for a Double Gate (DG) MOSFET are presented using the Lambert [...]

Density Gradient Quantum Surface Potential

Morris H., Cumberbatch E., Yong D., Abebe H., Tyree V., Claremont Graduate University, US

The PSP model, a generalized Surface-Potential (SP) model, has been chosen to be an industry standard for the next generation, 60nm, technology. A major drawback of such SP-models is that the surface potential is given [...]

Compact Models for Double Gate and Surrounding Gate MOSFETs

Abebe H., Cumberbatch E., Morris H., Uno S., San Jose State University, US

The models presented by Lu and Taur, [1], for lightly doped double gate and surrounding gate MOSFETs each require numerical solution of a transcendental equation. In this paper we present explicit, analytic solutions of these [...]

Analytical Models for Quantized Sub-Band Energy Levels and Inversion Charge Centroid of MOS Structures Derived from Asymptotic and WKB Approximations

Abebe H., Cumberbatch E., Morris H., Tyree V., USC/ISI, US

Quantum effects on MOS structures investigation.

A Wavelet Method for the Density-Gradient Equation

Morris H., Limon A., San Jose State University, US

As MOSFET device lengths have shrunk to submicron level, so too has the oxide thickness steadily reduced. At around 4-5nm thicknesses quantum effects start to become noticeable as electrons are able to tunnel through the [...]

Analytical Surface Potential Model with Polysilicon Gate Depletion Effect for NMOS

Cumberbatch E., Abebe H., Morris H., Tyree V., USC/ISI MOSIS, US

Different modeling approaches for the sub-100nm MOSFET are discussed in [1] and the surface potential description model is reported to be promising, [1, 2]. Surface potential changes impact gate capacitance and current-voltage (I-V) characteristics of [...]