Masquelier M.P. – TechConnect Briefs

Ab Initio Modeling of Boron Clustering in Silicon

Windl W., Liu X-Y., Masquelier M.P., Motorola, US

We present results of ab initio calculations for the structure and energetic of boron-interstitial clusters in Si and a respective continuum model for the nucleation, growth, and dissolution of such clusters. The structure of the [...]

Multiscale Modeling of Stress-Mediated Diffusion in Silicon, Ab Initio to Continuum

Windl W., Laudon M., Daw M.S., Carlson N.N., Masquelier M.P., Motorola, Inc., US

The introduction of new ‘back end’ materials, as well as the further scaling of silicon device dimensions, has raised the level of stress in dvice structures. Current engineering simulations of diffusion neglect the direct effect [...]

Modeling and Characterization of an Integrated FET Accelerometer

Kniffin M.L., Wiegele T.G., Masquelier M.P., Fu H., Whitfield J., Motorola, Inc., US

The GFET accelerometer is an integrated inertial sensor based on a movable-gate field effect transistor. The complexity of the transduction principle and the tight tolerances associated with its manufacture necessitated a large range of simulation [...]

1/f Noise Characterization of a Surface-Micromachined Suspended Gate FET

Fu H., Kniffin M.L., Watanabe G., Masquelier M.P., Whitfield J., Motorola, Inc., US

This paper presents the first detailed characterization and modeling of 1/f noise in a depletion mode surface-micromachined suspended gate nMOSFET. The results are compared and contrasted with the 1/f noise characteristics of a standard depletion [...]