Liang H. – TechConnect Briefs

Active Pixel CMOS Image Sensor with Single Transistor Architecture

Liang H., Zhang A., Zhang D., Zhang G., Zhang A., Zhang D., Zhang G., He J., Su Y., Zhang A., Zhang D., Zhang G., PKU-HKUST Shenzhen-Hongkong Institution, CN

CMOS active pixel image sensor with single transistor architecture (1T CMOS APS) is proposed in this paper and verified by experiment data. By switching the photo sensing pinned diode, reset and select can be achieved [...]

Analog/RF Performance Analysis of Coaxial Carbon Nanotube MOSFET from non-Equilibrium Green’s Function Simulation

Che Y., Chen Q., Liang H., Chen Q., Wang C., He H., Cao Y., PKU-HKUST Shenzhen-Hongkong Institution, CN

the analog/RF performance of Coaxial Carbon Nanotube Field Effect Transistor (CNTFET) including the trans-conductance efficiency gm/Id, cutoff frequency ft, and maximum oscillation frequency fmax are analyzed in details in this paper based on the non-equilibrium [...]

Attachment of Quantum dots and gold nano particles on ZnO nanorods and nanotubes

Hari P., Seay J., Liang H., The University of Tulsa, US

ZnO nanorods grown by hydrothermal technique are of great interest for potential applications in photovoltaic and optoelectronic devices. In this study we investigate the Optimization of the optical absorption properties by a wet chemical bath [...]

A Novel Parallel Flow Control (PFC) System for Syringe-Driven Nanofluidics

Liang H., Nam W.J., Fonash S.J., The Pennsylvania State University, US

In this work, we introduce the parallel flow control (PFC) configuration shown in Fig. 1 to address these key interfacing and flow control issues. PFC uses flow in a pressure-driven micro-channel, which interfaces with the [...]

Compact Capacitance Model of LDMOS for Circuit Simulation

Ma J., Ma Y., Chen P., Liang H., Ma J., Ma Y., Jeng M-C, Liu Z., Cadence Design Systems, Inc., US

Capacitance modeling in LDMOS is much more complicated than that in bulk MOSFET’s due to the fact of non-uniform lateral channel doping, the extended gate drain overlap region and its interaction with channel charges. Measurements [...]

Analysis and Modeling of NQS Effects in MOSFET’s

Ma Y., Jeng M-C, Liang H., Liu Z., Cadence Design Systems, Inc., US

Three issues regarding NQS effect in MOSFET’s are investigated: When NQS effect becomes significant, NQS effect on channel charge partition, and its implementation in advanced MOSFET models (PSP, Hisim2 and Bsim4).Channel segmentation method [1] with [...]