Li Y. – Page 2 – TechConnect Briefs

Narrow Fin Width Effect of HKMG Bulk FinFET Devices

Chen C-H, Chen C-Y, Chen L.-W., Chen Y-Y, Li Y., Chen C-H, Chen C-Y, Chen L.-W., Chen Y-Y, Chen C-H, Chen C-Y, Chen L.-W., Chen Y-Y, Hsu S.-C., Huang W.-T., Yang C.-M., Chen C-H, Chen C-Y, Chen L.-W., Chen Y-Y, Chu S.-Y., National Chiao Tung University, TW

In this study, we for the first time explore the dependence of the silicon fin width on electrostatic characteristic of HKMG bulk FinFET devices. On the same layout area, our study indicates that the narrow [...]

On Statistical Variation of MOSFETs Induced by Random-Discrete-Dopants and Random-Interface-Traps

Li Y., Su H-W, Chen C-Y, Chen Y-Y, Cheng H-W, Cheng H-W, Chen C-Y, Chen Y-Y, Cheng H-W, Chang H-T, National Chiao Tung University, TW

Abstract – In this work, we statistically study characteristic fluctuation of 16-nm-gate high-/metal gate (HKMG) MOSFETs by random-discrete-dopants (RDDs) inside silicon channel and random-interface-traps (RITs) at high-k/silicon interface. Randomly generated devices with three-dimensional (3D) RDDs [...]

High Performance Sputtered PZT Film for MEMS applications

Hishinuma Y., Li Y., Birkmeyer J., Fujii T., Naono T., Arakawa T., FUJIFILM Dimatix, US

We have developed a method of forming PZT films on silicon substrates with a high piezoelectric coefficient using RF sputtering. Films have been formed on 6 inch wafers with thickness variation of less than +/-5% [...]

Effects of Random Work Function Fluctuations in Nanoszied Metal Grains on Electrical Characteristic of 16 nm High-/Metal Gate Bulk FinFETs

Cheng H-W, Chiu Y-Y, Lee Y-H, Li Y., National Chiao Tung University, TW

High-/metal gate (HKMG) is one of key technologies for sub-45-nm generations in nano-CMOS era [1-2]. However, using HKMG may introduce random work functions (WKs) on device’s metal gate due to various metal grain orientations [3-5]. [...]

Shape Effect on the Reflectance of Sub-Wavelength Structures on Silicon Nitride for Solar Cell Application

Sahoo K.C., Li Y., Chang E.Y., National Chiao Tung University, TW

Sub-wavelength structure (SWS) on anti-reflection coating instead of semiconductor surface can improve the efficiency of silicon solar cell has been studied both numerically and experimentally recently. The shape of the SWS may be somewhat variable [...]

Shape Effect on the Reflectance of Sub-Wavelength Structures on Silicon Nitride for Solar Cell Application

Sahoo K.C., Li Y., Chang E.Y., National Chiao Tung University, TW

Sub-wavelength structure (SWS) on anti-reflection coating instead of semiconductor surface can improve the efficiency of silicon solar cell has been studied both numerically and experimentally recently. The shape of the SWS may be somewhat variable [...]

Synthesis and characterization of methoxy poly(ethylene glycol)-O-chitosan-polyethylenimine as a noviral carrier for gene delivery and expression

Yu Y.Y., Wang G., Wang Z., Cai L., Wang G., Wang Z., Yang X., Xu X.H., Xu Z.G., Wan X.P., Wang G., Wang Z., Xu X.H., Xu Z.G., Li Y., Jiang Q., Gao R., Sichuan University, CN

A novel water-soluble chitosan (CS) derivative，methoxy poly(ethylene glycol)-O-chitosan- polyethylenimine(mPEG-O-CS-PEI), was synthesized by grafting polycationic polyethylenimine (PEI) and methoxy poly (ethylene glycol) (mPEG) onto chitosan, the copolymer was characterized and confirmed by 1H-NMR and FT-IR spectra. [...]

Characteristic Optimization of Single- and Double-Gate Tunneling Field Effect Transistors

Lee K-F, Han M-H, Lo I-S, Yiu C-Y, Li Y., National Chiao Tung University, TW

The simulation results of this study have shown that the device with heavier source doping and shorter effective channel length lead to interesting device performance of TFETs. Such characteristic could be considered for device structure [...]

Comprehensive Examination of Intrinsic-Parameter-Induced Characteristic Fluctuations in 16-nm-Gate CMOS Devices

Han M-H, Li Y., National Chiao Tung University, TW

In this work, the intrinsic device parameter variability including the metal gate workfunction fluctuation (WKF), the process variation effect (PVE), and the random dopant fluctuation (RDF) in 16-nm-gate n-type MOSFETs (NMOS) and p-type MOSFETs (PMOS) [...]

Hydrothermal Growth of ZnO Nanostructures Using Zinc Thin Films as Seed Layer

Yang J-Y, Cheng H-W, Cheng T.-C., Cheng H-W, Cheng T.-C., Li Y., National Chiao Tung University, TW

Different zinc oxide nanostructures are selectively synthesized by a simple reaction of zinc acetate dihydrate with hexamethyltetramine (HMT) under mild hydrothermal conditions using zinc thin films as seed layer. Scanning electron microscopy (SEM) result of [...]