Chen C-H, Chen C-Y, Chen L.-W., Chen Y-Y, Li Y., Chen C-H, Chen C-Y, Chen L.-W., Chen Y-Y, Chen C-H, Chen C-Y, Chen L.-W., Chen Y-Y, Hsu S.-C., Huang W.-T., Yang C.-M., Chen C-H, Chen C-Y, Chen L.-W., Chen Y-Y, Chu S.-Y.
National Chiao Tung University, TW
In this study, we for the first time explore the dependence of the silicon fin width on electrostatic characteristic of HKMG bulk FinFET devices. On the same layout area, our study indicates that the narrow fin width possesses worse flat band voltage shift and large variation of gate capacitance owing to increased substrate resistance.
Journal: TechConnect Briefs
Volume: 1, Nanotechnology 2013: Advanced Materials, CNTs, Particles, Films and Composites (Volume 1)
Published: May 12, 2013
Pages: 147 - 150
Industry sector: Advanced Materials & Manufacturing
Topic: Materials Characterization & Imaging