Lee S. – Page 3 – TechConnect Briefs

Fabrication of nanoscale nozzle for electrostatic field induced inkjet head and test of drop-on-demand operation

Nguyen V.D., Byun D., Bui S., Tran Q., Schrlau M., Bau H.H., Lee S., Konkuk University, KR

Printing technology is considered to be a key technology even in the fields of electronics, materials processing, and biotechnology. However there is a genuine need for nano-to-macro integration technology for printing. This paper presents the [...]

Ultra-thin gold membrane transducer

Kim H., Kim Y., Cha M., Kim H., Kim Y., Lee J., Lee S., Shin J., Lee J., Lee S., Seoul National University, KR

This work deals with ultra-thin metal-based nanomechenical transducers that have potentials for extraordinary sensitivity. This nano membrane transducer (NMT) consists of a flat thin film of gold with 30-60 nm thickness freely suspended over large [...]

Ceramic Microarrays for Aggressive Environments

Atre S.V., Wu C., Simmons K.L., Laddha S., Jain K., Lee S., Park S-J, German R.M., Oregon Nanoscience & Microtechnologies Institute, US

The effect of particle characteristics and polymer rheology on the fabrication of sintered ceramic microarrays using powder injection modling is examined. The impact of material composition on microfeature resolution and defect avoidance during processing was [...]

Discrete Volume Controllable Microdispenser Module

Lee J., Lee S., Lee J., Lee S., Seoul National University, KR

We report a microdispenser that can meter and mix sub-nanoliter liquids in a discrete quantity. Our device is based on the structural stopping valve used in passive dispensers. A vent channel was proposed, designed for [...]

Electrostatic Induced Inkjet Printing System for Micro Patterning and Drop-On-Demand Jetting Characteristics

Choi J., Kim Y., Kim Y.J., Son S.U., Kim Y., Kim Y.J., Lee S., Byun D., Ko H.S., Sungkyunkwan University, KR

Printing technology is considered to be a key technology even in the field of electronics, materials processing, and bio applications. Inkjet printing is an interesting patterning technique for electronic devices because it requires no physical [...]

Oxygen plasma treated superhydrophobic nozzle for electrospray device

Lee S., Lee Y., Byun D., Tran S.B.Q., Kim S., Park B., Lee S., Lee Y., Konkuk University, KR

When the meniscus of liquid is subject to strong electric field, electric charge is induced on the meniscus and electrostatic force elongates the liquid to form a cone-jet. This electrospray phenomenon can be applied to [...]

Pattern Characteristic by Electrostatic Drop-On-Demand Ink-jet Printing Using Capillary Inkjet Head System

Choi J., Son S.U., Kim Y., Lee S., Kim Y., Ko H.S., Byun D., Sungkyunkwan University, KR

Ink-jet printing technology is very attractive for forming micro-size patterns for flat panel displays (FPDS), semiconductor, biological and optical devices. Further the necessity of the industrial inkjet system has grown in the past years due [...]

A Study on the Electrical Properties of Plasma Nitrided Oxide Gate Dielectric in Flash Memory

Park M., Suh K., Lee S., Kang H., Kim K., Kim K., Samsung Electronics, KR

In this paper, we address the effect of Plasma Nitridation on the gate dielectric by a combined experimental and simulation study of gate oxidation. Firstly, Boron segregation at the Si/SiO2 interface is experimentally characterized by [...]

Novel Manufacturing Technology of Polymeric Nanocomposites Using Supercritical Fluid Process

Jung H-T, Hong Y., Lee H., Lee S., Lee H., Lee S., Park M., Kim J., Lim S., Korea Institute of Science & Technology, KP

The increasing interest during the last few decades in decreasing the environmental effects of the release of organic compounds and aqueous waste has motivated the development of polymeric materials in supercritical fluids(SCF). However, the advantages [...]

Inner Sidewall Gate MOSFET with HfO2 gate Dielectric and Pt electrode

Im K., Ahn C-G, Yang J.H., Baek I-B, Choi C-J, Lee S., Hwang H., Cho W-J, Choi C-J, Electronics and Telecommunications Research Institute, KR

UTB ISG MOSFET with gate length of 60 nm was fabricated with HfO2 gate dielectric and Pt gate electrode. The proposed device has some advantage over conventional replacement gate process. Besides simpler process, the remaining [...]