High-Voltage MOSFET Model Valid for Device Optimization
Oritsuki Y., Sakuda T., Sadachika N., Miyake M., Kajiwara T., Kikuchihara U. Feldmann H., Mattausch H.J., Miura-Mattausch M., Miura-Mattausch M., Hiroshima University, JP
Market for power devices are expanding due to the global warming problem. It is expected that the power devices play an important role for stopping the problem. For this purpose accurate compact models are highly [...]