Jaud M-A – TechConnect Briefs

Analytical model of quantum threshold voltage in short-channel nanowire MOSFET including band structure effects

Dura J., Martinie S., Munteanu D., Jaud M-A, Barraud S., Autran J-L, CEA/LETI/MINATEC, FR

The particular shape of Gate-All-Around (GAA) nanowires allows a much higher electrostatic control of the active region than conventional devices, as required for the integration at the end-of-roadmap. This architecture is suitable for ultra-scaled devices [...]

A Continuous Compact Model of Short-Channel Effects for Undoped Cylindrical Gate-All-Around MOSFETs

Cousin B., Reyboz M., Rozeau O., Jaud M-A, Ernst T., Jomaah J., CEA/LETI/MINATEC, FR

A continuous and explicit compact model of short-channel effects (SCEs) for undoped cylindrical Gate-All-Around (GAA) MOSFETs is presented in this paper. SCEs are implemented into an analytic and continuous drain-current model based on a surface [...]

Analytical Modelling of Ballistic and Quasi-Ballistic Nanowires:Validation and Application to CMOS Architecture

Martinie S., Munteanu D., Le Carval G., Jaud M-A, Autran J-L, CEA/LETI/MINATEC, FR

We present here an unified analytic model for ballistic and quasi-ballistic Silicon Nanowire (SNW represented in figure 1). Starting from the classical flux method and using the Lundstrom/Natori approaches [1-2], we enhanced them by taking [...]

Performance study of Ballistic and Quasi-Ballistic on Double-Gate MOSFETs 6T SRAM cell

Martinie S., Jaud M-A, Munteanu D., Thomas O., Le Carval G., Autran J-L, CEA/LETI/MINATEC, FR

The impact of ballistic/quasi-ballistic carrier transport on the switch of a CMOS inverter and on the noise margin of a 6T SRAM cell, both based on Double-Gate MOSFETs (DGMOS), is analysed using mixed-mode simulation. To [...]

Impact of Quantum Mechanical Tunnelling on Off-leakage Current in Double-gate MOSFET using a Quantum Drift-diffusion Model

Jaud M-A, Barraud S., Le Carval G., CEA-LETI, FR

With the growing use of wireless electronics systems, off-state leakage current in MOSFETs appears as one of the major physical limitations. Measurements of quantum tunnel current between source-drain (S?D) have recently shown that it will [...]