He P. – TechConnect Briefs

A New Method to Fin-width Line Edge Roughness Effect Simulation of FinFET Performance

Zhu Y., Zhao W., Wang W., Wu W., Feng Z., He J., He P., He J., He P., Song L., Peking University Shenzhen SOC Key Laboratory, CN

This paper developed a full three-dimensional (3-D) statistical simulation method to investigate Fin-width Line Edge Roughness (LER) effect on the FinFETs performance. The line edge roughness is introduced by Matlab program, and then the intrinsic [...]

A Full Differential Charge Pump Based on Symmetrical Complementary Half-Current Circuit Architecture

Huang Q., Zhao W., Wang W., Wu W., Du C., Feng Z., He J., He P., He J., He P., Song L., Peking University Shenzhen SOC Key Laboratory, CN

A full differential charge pump with low current mismatch and deviation is designed in this paper based on the symmetric complementary half-current circuit architecture. It adopts two symmetrical complementary P-N replica circuits with half value [...]