A Compact Model for SiC Junction Barrier Schottky Diode for High-Voltage and High-Temperature Applications
Navarro D., Herrera F., Miura-Mattausch M., Mattausch H.J., Miura-Mattausch M., Takusagawa M., Kobayashi J., Hara M., Hiroshima University, JP
SiC-based Junction Barrier Schottky (JBS) Diode is employed in power conversion applications because of its low-leakage current and high switching speed characteristics even at elevated temperatures. JBS structure originates from Schottky Barrier Diode (SBD) structure, [...]