Gupta M. – TechConnect Briefs

Physics based Analytical Model for a Pocket Doped p-n-p-n Tunnel Field Effect Transistor

Narang R., Saxena M., Gupta M., Gupta R.S., Gupta M., Gupta R.S., University of Delhi, South Campus, IN

Tunnel FET working on the principle of band-to-band tunneling mechanism has come up as a promising candidate with advantages of going below the limitation of 60mV/decade sub-threshold slope, and lower leakage current and thus capable [...]

Analytical Drain Current Model for Damaged Gate All Around (GAA) MOSFET Including Quantum and Velocity Overshoot Effects

Gautam R., Saxena M., Gupta M., Gupta R.S., Gupta M., Gupta R.S., University of Delhi, South Campus, IN

The Cylindrical Gate All Around (GAA) Nanowire MOSFET exhibits strong drive currents and reduced short channel effects due to enhanced gate control and high surface quality of NW channels [1]. Apart from short channel immunity, [...]

Linearity Performance Assessment of Nanoscale Gate Material Engineered Trapezoidal Recessed Channel (GME-TRC) MOSFET for RFIC design and Wireless application

Malik P., Chaujar R., Gupta M., Gupta R.S., Gupta M., Gupta R.S., Semiconductor Devices Research Laboratory, IN

In this work, an extended study of linearity behaviour of proposed Gate Material Engineered-Trapezoidal Recessed Channel(GME-TRC) MOSFET(Fig.1.) has been performed using ATLAS and DEVEDIT device simulators and the results so obtained are compared with Trapezoidal [...]

Microwave and RF Applications of Gate Material Engineered Trapezoidal Recessed Channel (GME-TRC ) MOSFET

Malik P., Chajaur R., Gupta M., Gupta R.S., Gupta M., Gupta R.S., Semiconductor Devices Research Laboratory, IN

In this paper, the RF performance for Gate Material Engineered-Trapezoidal Recessed Channel (GME-TRC ) MOSFET(Fig.1.) has been investigated and the results so obtained are compared with Trapezoidal Recessed Channel (TRC) MOSFET(Fig.1.), using device simulators; ATLAS [...]

Using Nanoparticles and Carbon Nanotubes to Enhance the Properties of a Lead-free Solder

Nai S.M.L., Han Y.D., Jing H.Y., Tan C.M., Wei J., Gupta M., Singapore Institute of Manufacturing Technology, SG

Solders are used in various levels of electronic assembly sequence, whereby good electrical, thermal and mechanical performances of solder are necessary. With miniaturization of devices, diverse functional requirements and ever-stricter operating environments of devices, the [...]

Compact Analytical Threshold Voltage Model for Nanoscale Multi-Layered-Gate Electrode Workfunction Engineered Recessed Channel (MLGEWE-RC) MOSFET

Chaujar R., Kaur R., Saxena M., Gupta M., Gupta R.S., Gupta M., Gupta R.S., University of Delhi, IN

In this paper, compact analytical threshold voltage model for multi-layered-gate electrode workfunction engineered recessed channel (MLGEWE-RC) MOSFET is presented and investigated using ATLAS device simulator. The novel device continues merits of recessed channel and dual [...]

Linearity Performance Enhancement of DMG AlGaN/GaN High Electron Mobility Transistor

Kumar S.P., Agrawal A., Chaujar R., Gupta M., Gupta R.S., Gupta M., Gupta R.S., Semiconductor Device Research Laboratory, IN

HEMTs are promising devices for RF wireless communications. For wireless communication applications and RF circuit design, linearity is always one of the most important issues. This is because the devices used in the system may [...]

Assessment of L-DUMGAC MOSFET for High Performance RF Applications with Intrinsic Delay and Stability as Design Tools

Chaujar R., Kaur R., Saxena M., Gupta M., Gupta R.S., Gupta M., Gupta R.S., Semiconductor Devices Research Laboratory, IN

The paper assesses RF performance of L-DUMGAC MOSFET using ATLAS device simulator by performing AC simulations at very high frequencies, hence, proving its efficacy for high performance RF applications. Higher Gma & K; and lower [...]

Comparison of Three Region Multiple Gate Nanoscale Structures for Reduced Short Channel Effects and High Device Reliability

Goel K., Saxena M., Gupta M., Gupta R.S., Gupta M., Gupta R.S., Professor, IN

We have modeled a new structure TRIMGAS which has 3 gate materials in the gate and an oxide stack. we have compared various parameters to see whether this strucure is superior to any of our [...]