Fjeldly T.A. – TechConnect Briefs

Unified Modeling of Multigate MOSFETs Based on Isomorphic Modeling Principles

Fjeldly T.A., Monga U., Norwegian University of Science and Technology, NO

A compact, unified and analytical model is presented for the 3D electrostatics of nanoscale, multigate MOSFETs. The model is based on solutions of the 3D Laplace equation (subthreshold) and Poisson’s equation (above threshold), where suitable [...]

Compact Model for Intrinsic Capacitances in AlGaN/GaN HEMT Devices

Khandelwal S., Fjeldly T.A., NTNU, NO

We present a physics-based analytical compact model for intrinsic gate-source and gate-drain capacitances (CGS and CGD) in AlGaN/GaN HEMT these devices. The gate-channel capacitance Cch is derived from the unified 2-DEG charge density model developed [...]

Analytical Solutions to Model the Line Edge Roughness and its Effect on Subthreshold Behavior of DG FinFETs

Monga U., Fjeldly T.A., Norwegian University of Science and Technology, and University Graduate Center (UNIK), NO

Statistical variability such as line edge roughness (LER) and random dopant effects have become major concerns in the nanoscale regime. Due to the intrinsic body, multigate devices such as FinFETs don’t suffer from random dopant [...]

Compact Subthreshold Modeling of Rectangular Gate and Trigate MOSFETs

Fjeldly T.A., Monga U., Norwegian University of Technology, NO

We have previously shown that the subthreshold potential distribution of DG and circular gate MOSFETs can be precisely modeled using conformal mapping techniques. Simpler, unified models suitable for circuit design can also be established for [...]

Analytical Modeling of the Subthreshold Electrostatics of Nanoscale GAA Square Gate MOSFETs

Vishvakarma S.K., Fjeldly T.A., Norwegian University of Science and Technology, NO

An analytical model is presented for the 3-D electrostatics of lightly doped GAA square gate MOSFETs operating in the subthreshold domain. The model is based on the assumption of parabolic potential distributions in the directions [...]

Subthreshold Quantum Ballistic Current and Quantum Threshold Voltage Modeling for Nanoscale FinFET

Monga U., Fjeldly T.A., UniK/Norwegian University of Science and Technology, NO

A subthreshold quantum ballistic current model and a quantum threshold voltage model is presented for nanoscale FinFET.The eigenvalues are determined by solving Schrödinger equation along the gate-to-gate axis. The current is then modeled using Natori’s [...]

Compact Quantum Modeling Framework for Nanoscale Double-Gate MOSFET

Monga U., Fjeldly T.A., Norwegian University of Science and Technology, NO

A quantum mechanical modeling framework for ultra-thin body double-gate MOSFETs operating in subthreshold and near-threshold regime is presented. For subthreshold conditions, we have assumed that the electrostatics is dominated by capacitive coupling between the body [...]

Capacitance modeling of Short-Channel DG and GAA MOSFETs

Børli H., Kolberg S., Fjeldly T.A., Norwegian University of Science and Technology, NO

Based on our framework model of the electrostatics and the drain current in short-channel, nanoscale DG and GAA MOSFETs, we here present a corresponding model for the device capacitances covering all regimes of operation from [...]

Stacked Coupled-Disk MEMS Resonators for RF Applications

Nygaard K.H., Grinde C., Fjeldly T.A., Norwegian University of Science and Technology, NO

A novel, stacked coupled-disk resonator design is presented where the silicon discs vibrate in radial contour modes, actuated by electrodes wrapped around the disk periphery. The self-aligned, central stem mediates the coupling and also anchors [...]

Compact Modeling Framework for Short-Channel DG and GAA MOSFETs

Børli H., Kolberg S., Fjeldly T.A., Norwegian University of Science and Technology, NO

To achieve sufficient accuracy in the compact modeling of short-channel, nanoscale DG and GAA MOSFETs, the multi-dimensionality of the body potential and the electronic charge distribution has to be accurately described. In sub-threshold, the device [...]