Fichtner W. – TechConnect Briefs

A Novel Grid Adaptation Procedure for Stationary 2D Device Simulation

Schmithusen B., Gartner K., Fichtner W., Integrated Systems Laboratory, ETHZ, CH

A novel anisotropic grid adaptation procedure for the stationary 2D drift-diffusion model in semiconductor device simulation is presented. The adaptation approach is based on the principle of equidistributing local dissipation rate errors and suitable for [...]

Towards Predictive TCAD and Fab Integration

Fichtner W., Swiss Federal Institute of Technology, CH

This paper gives an overview of the status of technology computer-aided design (TCAD) as it is used today for research, development and manufacturing projects in the micro- and opto-electronics industry. While the accurate and physics-based [...]

Two-Dimensional Simulation of Scanning Capacitance Microscopy Measurements of Arbitrary Doping Profiles

Ciampolini L., Ciappa M., Malberti P., Fichtner W., Swiss Federal Institute of Technology, CH

Accurate prediction of doping distributions in modern VLSI devices (e.g. shallow junctions) with TCAD tools represents a major challenge which requires the process simulation models to be accurately tuned on the basis of two-dimensional dopant [...]

Optimal Time Stepping in the Thermo-mechanical Finite Element Simulation of IGBTs Modules

Tronel Y., Fichtner W., ETH Zürich, CH

In the analysis of the thermo-mechanical response of the wire bond connection found e.g in IGBTs modules, it has been found that the level of stresses are within the plastic range [1]. Therefore an incremental [...]

Acceleration of Inductance Extraction by Means of the Monte Carlo Method

Leonhardt G., Fichtner W., Swiss Federal Institute of Technology, CH

With increasing signal frequencies inductive effects of metallic interconnections in all kinds of packages become more and more important for the electrical behavior of a circuit. During the design process it is therefore of interest [...]

Dispersive Media in FDTD-Comparison of Recursive Convolution and Auxiliary Differential Equation Methods

Körner T.O., Fichtner W., ETH-EPFL, CH

A new, efficient algorithm for modelling dispersive media in Finite Difference Time Domain (FDTD) methods is presented. It is based on the Auxiliary Differential Equation (ADE) formulation. Accuracy and efficiency are compared to other ADE [...]

Inductance Extraction by Means of the Monte Carlo Method

Leonhardt G., Hager C., Regli P., Fichtner W., ETH-EPFL, CH

This paper presents a novel inductance extraction procedure which is based on a Monte Carlo sampling technique. Partial inductances for static current distributions can be computed efficiently and with small memory requirements, thus enabling the [...]

Electro-Thermo-Mechanical Simulations of Aluminum Bond Wires in IGBT-Packages

Hager C., Tronel Y., Fichtner W., ETH-EPFL, CH

Finite-element simulations have been performed on aluminum wires as used in modern IGBT (Insulated Gate Bipolar Transistor) power modules. These wires were ultrasonically bonded to thin molybdenum plates and the influence of different origins of [...]

A Global Finite Element Model for Improving the Thermo-Mechanical Reliability of IBGTs Modules

Tronel Y., Fichtner W., Swiss Federal Institute of Technology Zürich, CH

Insulated Gate Bipolar Transistors (IGBT's) are widely used in the automotive industry as high power current switches. They are currently being introduced into traction applications (locomotives, trams, metros, etc.) where high reliability is extremely important. [...]