Cumberbatch E. – TechConnect Briefs

Single-walled Carbon Nanotube (CNT) Field Effect Transistor Device Modeling

We have developed a surface potential based compact model for a single well semiconductor CNT field effect transistor. Our compact modeling results for surface potential, channel charge, gate capacitance and channel current are compared with [...]

Carbon Nanotube Field Effect Transistor (CNTFET) 2-D Channel Electrostatic Potential Model for TCAD Application

Abebe H., Cumberbatch E., USC, US

A 2-D channel electrostatic potential model of CNTFET is presented. The model is developed by directly solving Laplace’s equation in cylindrical coordinates with appropriate boundary conditions. To the best of our knowledge, the Technology Computer [...]

Improved Compact Model of Quantum Sub-band Energy Levels for MOSFET Device Application

Feldman W., Cumberbatch E., Abebe H., USC/ISI, US

Compact models for quantum mechanical behavior of transistors are becoming increasingly important as shrinking transistor sizes bring the oxide thickness to below four nanometers. An exponential approximation for the silicon potential is used to derive [...]

Electrostatic Potential Compact Model for Symmetric and Asymmetric Lightly Doped DG-MOSFET Devices

Abebe H., Cumberbatch E., Uno S., Tyree V., USC/ISI, US

The analytical symmetric and asymmetric lightly doped DG-MOSFET device electrostatic potential compact model presented here improves the compact model accuracy without any iteration. The model is developed using the Lambert Function and a 2-dimensional (2-D) [...]

Compact Models for Double Gate MOSFET with Quantum Mechanical Effects using Lambert Function

Abebe H., Morris H., Cumberbatch E., Tyree V., University of Southern California, ISI, US

This paper is a continuation of the work we presented in the 2006 IEEE UGIM Proceedings. Iterative compact device models with quantum mechanical effects for a Double Gate (DG) MOSFET are presented using the Lambert [...]

Density Gradient Quantum Surface Potential

Morris H., Cumberbatch E., Yong D., Abebe H., Tyree V., Claremont Graduate University, US

The PSP model, a generalized Surface-Potential (SP) model, has been chosen to be an industry standard for the next generation, 60nm, technology. A major drawback of such SP-models is that the surface potential is given [...]

Compact Models for Double Gate and Surrounding Gate MOSFETs

Abebe H., Cumberbatch E., Morris H., Uno S., San Jose State University, US

The models presented by Lu and Taur, [1], for lightly doped double gate and surrounding gate MOSFETs each require numerical solution of a transcendental equation. In this paper we present explicit, analytic solutions of these [...]

Analytical Models for Quantized Sub-Band Energy Levels and Inversion Charge Centroid of MOS Structures Derived from Asymptotic and WKB Approximations

Abebe H., Cumberbatch E., Morris H., Tyree V., USC/ISI, US

Quantum effects on MOS structures investigation.

Analytical Surface Potential Model with Polysilicon Gate Depletion Effect for NMOS

Cumberbatch E., Abebe H., Morris H., Tyree V., USC/ISI MOSIS, US

Different modeling approaches for the sub-100nm MOSFET are discussed in [1] and the surface potential description model is reported to be promising, [1, 2]. Surface potential changes impact gate capacitance and current-voltage (I-V) characteristics of [...]

Quantum mechanical effects correction models for inversion charge and I-V characteristics of the MOSFET device

Abebe H., Cumberbatch E., MOSIS, US

A 1-dimensional analytic quantum mechanical effects correction formula for the MOSFET inversion charge and I-V characteristics are derived from the density gradient (DG) model using matched asymptotic expansion techniques. The primary theoretical framework for this [...]