Chen C-Y – TechConnect Briefs

A novel Planetary Motion of Ferrofluid Drops in a Rotating Magnetic Field

Chen C-Y, National Chiao Tung University, TW

Driven by an external rotating field, a novel phenomenon of planetary-like double rotations, such as a local self-spin of individual drops and the global revolution of the drop array, is uncovered in arrayed ferrofluid drops. [...]

Narrow Fin Width Effect of HKMG Bulk FinFET Devices

Chen C-H, Chen C-Y, Chen L.-W., Chen Y-Y, Li Y., Chen C-H, Chen C-Y, Chen L.-W., Chen Y-Y, Chen C-H, Chen C-Y, Chen L.-W., Chen Y-Y, Hsu S.-C., Huang W.-T., Yang C.-M., Chen C-H, Chen C-Y, Chen L.-W., Chen Y-Y, Chu S.-Y., National Chiao Tung University, TW

In this study, we for the first time explore the dependence of the silicon fin width on electrostatic characteristic of HKMG bulk FinFET devices. On the same layout area, our study indicates that the narrow [...]

On Statistical Variation of MOSFETs Induced by Random-Discrete-Dopants and Random-Interface-Traps

Li Y., Su H-W, Chen C-Y, Chen Y-Y, Cheng H-W, Cheng H-W, Chen C-Y, Chen Y-Y, Cheng H-W, Chang H-T, National Chiao Tung University, TW

Abstract – In this work, we statistically study characteristic fluctuation of 16-nm-gate high-/metal gate (HKMG) MOSFETs by random-discrete-dopants (RDDs) inside silicon channel and random-interface-traps (RITs) at high-k/silicon interface. Randomly generated devices with three-dimensional (3D) RDDs [...]

Motion of Magnetic Chains in a Vibrating Field

Li Y-H, Sheu S-T, Pai J-M, Chen C-Y, National Chiao Tung University, TW

In this work, we have carried out an intensive experimental study on the manipulations of micro magnetic particle chains under vibrating magnetic fields. The chain is firstly formed by a uniform directional field, and then [...]

Random Work Function Induced DC Characteristic Fluctuation in 16-nm High-k/Metal Gate Bulk and SOI FinFETs

Su H-W, Chen C-Y, Chen Y-Y, Cheng H-W, Chen C-Y, Chen Y-Y, Cheng H-W, Cheng H-W, Chang H-T, Li Yiming, National Chiao Tung University, TW

This work studies the metal gate’s work function fluctuation induced DC characteristic fluctuation in the 16-nm bulk and silicon-on-insulator (SOI) fin-type field effect transistor (FinFET) devices using an experimentally calibrated 3D device simulation. The method [...]

Modeling of FET Flicker Noise and Impact of Technology Scaling

Chen C-Y, Liu Y., Cao S., Dutton R., Sato-Iwanaga J., Inoue A., Sorada H., Stanford University, US

Ongoing scaling of device dimensions, including the introduction of new channel materials and device structures, as well as the incorporation of novel gate-stack materials, has major implications on noise performance metrics. In particular, flicker noise [...]

Extraordinary Transmission through Al/Si Structure Perforated with Random Distribution of Holes

Chang Y-T., Tung I-C, Chen C-Y, Chen C.C., Tsai M-W, Chan C-H, Chang Y-T., Chen C-Y, Chen C.C., Lee S-C, National Taiwan University, TW

Extraordinary transmission through Al/Si structure perforated with random distribution of holes. The (1, 0) Al/Si surface plasmon mode due to hole array with 1st nearest neighbor distance. The transmission peak intensity is found to depend [...]