Assad F. – TechConnect Briefs

On Idlow with Emphasis on Speculative SPICE Modeling

Chen Q., Wu Z-Y, Icel A.B., Goo J-S, Krishnan S., Thuruthiyil C., Subba N., Suryagandh S., An J.X., Ly T., Radwin M., Yonemura J., Assad F., Advanced Micro Devices, US

An empirical correlation model of Idlow, the MOSFET drain current measured at Vgs=Vdd/2 and Vds=Vdd, where Vdd is the supply voltage, is proposed based on the alpha-power law model. It enables a comprehensive analysis of [...]

An A Priori Hysteresis Modeling Methodology for Improved Efficiency and Model Accuracy in Advanced PD SOI Technologies

Chen Q., Goo J-S, Subba N., Cai X., An J.X., Ly T., Wu Z-Y, Suryagandh S., Thuruthiyil C., Radwin M., Zamudio L., Yonemura J., Assad F., Pelella M.M., Icel A.B., Advanced Micro Devices, US

Exploiting the asymmetric nature of interactions among hysteresis, “nonFET”, and DC characteristics, an a priori hysteresis modeling methodology has been proposed as an essential part of an improved model extraction flow for advanced PD SOI [...]

Modeling On-Currents for n-MOSFETs: Ultimate Limits vs. the NTRS

Assad F., Ren Z., Vasileska D., Datta S., Lundstrom M.S., Purdue University, US

The continued evolution of Si technology hinges to a large extent on the ability to maintain high on-currents while achieving low off-currents. As we move from sub-micron to nanoscale technology, it is not at all [...]