Complete Surface-Potential Modeling Approach Implemented in the HiSIM Compact Model Family for Any MOSFET Type
Miura-Mattausch M., Miyake M., Kikuchihara H., Feldmann U., Amakawa S., Mattausch H.J., Miura-Mattausch M., Hiroshima University, JP
Many possible future device structures are investigated in parallel to obtain highest performance features. It has been shown that an SOI-MOSFET with a thin body enables both high device performances and suppression of statistical variations. [...]