Purdue University – Page 7 – TechConnect Briefs

Finite Size Scaling in Quantum Mechanics

Kais S., Purdue University, US

We present the finite size scaling method for studying the critical behavior of a quantum Hamiltonian H(l1,...,lk) as a function of a set of parameters {lk}. In this context, critical means the values of {lk} [...]

Molecular Conductors: Paradigms and Possibilities

Ghosh A.W., Paulsson M., Datta S., Purdue University, US

The purpose of this talk is to present simple models (whose parameters are extracted from first-principles theory) that capture the basic physics of molecular conduction and provide intuitive explanations for a number of features in [...]

The Landauer Approach to the Critical Source-Channel Barrier in MOSFETs

Lundstrom M., Rhew J-H., Purdue University, US

A simple treatment of the nano-scale MOSFET in the spirit of the Landauer approach to transport in mesoscopic structures is described. First, the essential physics is illustrated by examining numerical simulations. Next, the analytical theory [...]

The Landauer Approach to the Critical Source-Channel Barrier in MOSFETs

Lundstrom M., Rhew J-H., Purdue University, US

A simple treatment of the nano-scale MOSFET in the spirit of the Landauer approach to transport in mesoscopic structures is described. First, the essential physics is illustrated by examining numerical simulations. Next, the analytical theory [...]

Towards a Compact Scattering Model for Nanoscale MOSFETs

Rahman A., Ren Z., Rhew J-H., Lundstrom M.S., Purdue University, US

A new compact model for nanoscale MOSFETs based on scattering theory is proposed for the full range of VGS and VDS covering sub-threshold, linear and saturation regions of operation. Quantum confinement and carrier degeneracy are [...]

Computer-Aided Kinematic Design of a Torsional Ratcheting Actuator

Sacks E., Barnes S.M., Purdue University, US

We have developed an interactive computer-aided design program that supports the mechanical design of devices fabricated in surface micro-machining processes. The program automates kinematic analysis via a novel configuration space computation code, performs real-time simulation [...]

Design of Piezoresistive Silicon Cantilevers with Stress Concentration Regions (SCR) for Scanning Probe Microscopy (SPM) Applications

Gupta A., Bashir R., Neudeck G.W., McElfresh M., Purdue University, US

This paper describes and evaluates the incorporation of novel Stress Concentration Region (SCR) in silicon based cantilevers to enhance piezoresistive displacement, force, and torque sensitivities. In brief, SCR is a region, on the cantilever, with [...]

Modeling On-Currents for n-MOSFETs: Ultimate Limits vs. the NTRS

Assad F., Ren Z., Vasileska D., Datta S., Lundstrom M.S., Purdue University, US

The continued evolution of Si technology hinges to a large extent on the ability to maintain high on-currents while achieving low off-currents. As we move from sub-micron to nanoscale technology, it is not at all [...]

MEMS Functional Validation Using the Configuration Space Approach to Simulation and Analysis

Sacks E., Allen J., Purdue University, US

We have developed an interactive computer-aided design program that supports mechanical design of devices fabri-cated in surface micro-machining processes. The program automates kinematic analysis via a novel configuration space computation code, performs real-time simulation, and [...]