Philips Research Laboratories – TechConnect Briefs

III-V semiconductor nanowires grown on silicon for vertical devices

Helman A., Borgström M., Wunnicke O., van den Einden W., Verheijen M.A., Roest A.L., Bakkers E.P.A.M., Philips Research Laboratories, NL

The integration of III-V semiconductor nanostructures to silicon technology still represents a challenge. In this work we explore the potential of III-V semiconductor nanowires grown on silicon for the fabrication of electronic devices such as [...]

Recent Enhancements of MOS Model 11

van Langevelde R., Scholten A.J., Klaassen D.B.M., Philips Research Laboratories, NL

MOS Model 11 (MM11) is a surface-potential-based compact MOSFET model, which was introduced in 2001 (level 1100). An update of MM11, level 1101, was introduced in 2002. At the moment a second update of MM11, [...]

Compact Modelling of High-Voltage LDMOS Devices

Aarts A.C.T., van der Hout R., van Langevelde R., van der Hout R., van Langevelde R., Scholten A.J., Willemsen M.B., Klaassen D.B.M., Philips Research Laboratories, NE

In this paper various modelling approaches for Laterally Double-Di used MOS (LDMOS) devices are discussed. Characterisation results for the new compact LDMOS model called MOS Model 20 are presented. Measurements of the dc-current, its conductances [...]

Recent Enhancements of MOS Model 11

van Langevelde R., Scholten A.J., Klaassen D.B.M., Philips Research Laboratories, NL

MOS Model 11 (MM11) is a surface-potential-based compact MOSFET model, which was introduced in 2001 (level 1100). An update of MM11, level 1101, was introduced in 2002. At the moment a second update of MM11, [...]

RF Applications of MOS Model 11

van Langevelde R., Scholten A.J., Tiemeijer L.F., Havens R.J., Klaassen D.B.M., Philips Research Laboratories, NL

RF-CMOS applications impose increasingly stringent requirements on compact models used in circuit simulation. In this paper several of these issues will be addressed together with a discussion of the state-of-the-art of compact modelling.