III-V semiconductor nanowires grown on silicon for vertical devices

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The integration of III-V semiconductor nanostructures to silicon technology still represents a challenge. In this work we explore the potential of III-V semiconductor nanowires grown on silicon for the fabrication of electronic devices such as bipolar and field effect transistors. The main interest arises from the combination of (opto)electronic properties of III-V semiconductors with the existing silicon-based technology. The quality of the interface between the III-V nanowire and silicon substrate is critical for the device performance. A detailed structural characterization of III-V nanowires grown by laser ablation and metal-organic vapor-phase-epitaxy on silicon has been carried out by means of scanning electron microscopy (SEM) and transmission electron microscopy (TEM) in order to asses the epitaxial growth and the quality of the heterointerface.
A particular interest is given to the realization of vertical devices, which is the first step towards the fabrication of arrays of nanowire devices. The results on three terminal field effect devices with a wrap gate and the discussion on the top metal contacting will be presented. Electrical characterization is carried out in order to determine transport properties and deduce information about the band structure of the nanowires.

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Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 7, 2006
Pages: 133 - 136
Industry sector: Advanced Materials & Manufacturing
Topic: Advanced Manufacturing
ISBN: 0-9767985-8-1