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HomeAffiliationsNanyang Technological University

Affiliations: Nanyang Technological University

Effects of membrane pore morphology on fouling behavior of polymeric micro-fabricated membrane during crossflow micro-filtration

Warkiani M.E., Gong H.Q., Fane A.G., Wicaksana F., Nanyang Technological University, SG
Membrane pore morphology can have a significant effect on the rate of flux decline where the dominant fouling mechanism is pore blockage and cake formation. Commercial micro-filters cannot be used effectively for this purpose because [...]

Effects of membrane pore morphology on fouling behavior of polymeric micro-fabricated membrane during crossflow micro-filtration

Warkiani M.E., Gong H.Q., Fane A.G., Wicaksana F., Nanyang Technological University, SG
Membrane pore morphology can have a significant effect on the rate of flux decline where the dominant fouling mechanism is pore blockage and cake formation. Commercial micro-filters cannot be used effectively for this purpose because [...]

Charge Partition in Lateral Nonuniformly-Doped Transistor

Zhang J., Zhou X., Zhu G., Lin S., Nanyang Technological University, SG
In this work, we aim to model the LDMOS capacitance behavior of the core channel. In order to simplify the problem, the diffused doping profile in the core channel is approximated as a step profile. [...]

Xsim: A Unified Compact Model for Bulk/SOI/DG/GAA MOSFETs

Zhou X., Nanyang Technological University, SG
This paper presents a unified compact model (Xsim) for bulk/SOI MOSFETs, double-gate (DG) FinFETs, and gate-all-around (GAA) silicon-nanowires (SiNWs) that has been under development over the past 13 years. One key feature of the model [...]

High Sensitivity Dielectric Filled Lamé Mode Resonator for Chemical and Biological Applications

Heidari A., Yoon YJ., Park WT., Lin J.T.M., Nanyang Technological University, SG
In recent years the use of micro and nano electromechanical (MEMS/NEMS) resonators for mass sensing applications has been extensively explored. In many applications, high sensitivity biomass sensors are required to sense small biological entities (e.g. [...]

Xsim: Benchmark Tests for the Unified DG/GAA MOSFET Compact Model

Zhou X., Zhu G.J., Srikanth M.K., Lin S-H, Chen Z.H., Zhang J.B., Wei C.Q., Yan Y.F., Selvakumar R., Nanyang Technological University, SG
This paper presents benchmark tests of the unified compact model (Xsim) for double-gate (DG) and gate-all-around (GAA) silicon-nanowire (SiNW) MOSFETs, which has been developed over the years with the unified regional modeling (URM) approach. The [...]

Functionalization of Carbon Nanotubes for Advanced CNT/LCP Nanocomposites

Sahoo N.G., Cheng H.K.F., Li L., Chan S.H., Zhao J., Nanyang Technological University, SG
A novel approach has been made to the chemical functionalization of multi-walled carbon nanotubes (MWCNTs) for developing advanced polymeric nanocomposites with liquid crystalline polymer (LCP). In the approach, we have selectively introduced two types of [...]

A Simple, Accurate Capacitance-Voltage Model of Undoped Silicon Nanowire MOSFETs

Lin S., Zhou X., See G.H., Zhu G., Wei C., Zhang J., Chen Z., Nanyang Technological University, SG
Gate-All-Around (GAA), or surrounding-gate, MOSFET is one of the most promising structures beyond bulk CMOS. In this paper, we present a simple, accurate C-V model of undoped silicon nanowire MOSFETs. Different with other models, proposed [...]

1/f Noise Model for Double-Gate FinFET Biased in Weak Inversion

Wei C.Q., Xiong Y.Z., Zhou X., Nanyang Technological University, SG
1/f noise model of long channel lightly-doped FinFET biased in weak inversion has been described using Hooge’s theory. From the drain current equation and the channel conductance expression, the total number of carriers under the [...]

Compact Model Application to Statistical/Probabilistic Technology Variations

Zhou X., Zhu G., Srikanth M., Selvakumar R., Yan Y., Chandra W., Zhang J., Lin S., Wei C., Chen Z., Nanyang Technological University, SG
ULSI systems are designed by electronic design automation (EDA) tools with performance figures-of-merit (FOM) measured by SPICE circuit simulation, in which nonlinear transistors are modeled by the compact model (CM) with its nominal set of [...]

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