US – Page 478 – TechConnect Briefs

A Fast Integral Equation Technique for Analysis of Microflow Sensors Based on Drag Force Calculations

Aluru N.R., White J.K., Massachusetts Institute of Technology, US

It is well known that MEMS based microfluidic devices operate in very low Reynolds number regime (Re < 1). Analysis and design of such microfluidic devices requires the solution of incompressible viscous fluid flow or [...]

Accurate Lumped-Parameter modeling for Dynamic Simulation of Electrostatic MEMS Actuators

Pal Chaudhury S., Winick D., Franzon P., North Carolina State University, US

This paper introduces a novel approach of accurately modeling electrostatically actuated MEMS structures, using a lumped parameter electrical analogy based on voltage controlled de.es in Spice. This analysis takes into account the changes in capacitive [...]

Simulation of Electrothermal MOS Circuits Using Saber

Liu C.C., Carlen E.T., Wise K.D., Mastrangelo C.H., University of Michigan, US

In this paper we present a simple methodology for simulating small to medium sized circuits where electrical and thermal equations are solved simultaneously using Saber, a commercial, general purpose simulator. Dynamic electrothermal models have been [...]

Rational RSM Models for Device Characteristics as Functions of Process Parameters

Granik Y., Moroz V., PDF Solutions, Inc., US

Conventional polynomial Response Surface Methodology (RSM) fails to provide oscillation-free analytical models for some device data with singularity like subthreshold slope vs threshold adjustment dose, poly gate length vs stepper defocus, etc. New type of [...]

Simple Method of Characterizing CMOS Channel Dopant Profiles Using CV Technique

Kapila D., Kulkarni M., Fernando C., Davis J., Vasanth K., Pollack G., Texas Instruments, Inc., US

In CMOS process and device simulations, characterization of complete dopant profiles in the channel region is essential for accurate simulations. We have developed a simple, fast and inexpensive methodology for characterizing CMOS channel dopant profiles [...]

Fast Inductance Extraction of 3-D Structures with Non-Constant Permeabilities

Massoud Y., White J.K., Massachusetts Institute of Technology, US

In this paper we present a discretized integral formulation for calculating the frequency-dependent inductance and resistance for 3-D structures that contains permeable materials. The method uses a magnetic surface charge formulation, and we present analytic [...]

1/f Noise Characterization of a Surface-Micromachined Suspended Gate FET

Fu H., Kniffin M.L., Watanabe G., Masquelier M.P., Whitfield J., Motorola, Inc., US

This paper presents the first detailed characterization and modeling of 1/f noise in a depletion mode surface-micromachined suspended gate nMOSFET. The results are compared and contrasted with the 1/f noise characteristics of a standard depletion [...]

Characterization of Electrostatically-Actuated Beams Through Capacitance-Voltage Measurements and Simulations

Chan E.K., Garikipati K., Hsiau Z-K, Dutton R.W., Stanford University, US

Detailed 2D electromechanical simulations of electrostatically-actuated beams reveal phenomena not captured by 1D or quasi-2D simulations. The behavior of the beam when in contact with a dielectric layer is studied. Capacitance-voltage measurements are used to [...]

Microelectromechanical Systems (MEMS) Design and Design Automation Research Projects at Duke University

Dewey A., Fair R.B., Duke University, US

This paper presents an overview of microelectromechanical systems (MEMS) research being conducted at Duke University. The Duke University MEMS research program encompasses initiatives in both application design and design automation. These two areas serve synergistic [...]

A Least Squares Algorithm for Optimal Heater Placement in Microsensors

Liu C.C., Man P.F., Mastrangelo C.H., University of Michigan, US

In this paper we present an algorithm that yields the optimal placement of a finite number of constant power density heaters for an arbitrary desired temperature profile. Using this algorithm, the volume efficiency (the percentage [...]