Simulation of Electrothermal MOS Circuits Using Saber

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In this paper we present a simple methodology for simulating small to medium sized circuits where electrical and thermal equations are solved simultaneously using Saber, a commercial, general purpose simulator. Dynamic electrothermal models have been developed representing both metal oxide semiconductor (MOS) and bipolar junction transistor (BJT) devices. The electrothermal models are then employed in the simulation of an infrared detector circuit, and a thermally isolated, suspended plate voltage controlled oscillator. Simulated results are compared to measured results taken from fabricated devices and systems. In all comparisons, the simulated data is in good agreement with experimental data.

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Journal: TechConnect Briefs
Volume: Technical Proceedings of the 1998 International Conference on Modeling and Simulation of Microsystems
Published: April 6, 1998
Pages: 239 - 244
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-96661-35-0-3