US – Page 448 – TechConnect Briefs

A 3D Geometry Modeler for the SUMMiT V MEMS Designer

Jorgensen C.R., Yarberry V.R., Sandia National Laboratories, US

This paper will describe the SUMMiT V 3D Modeler; a 3D geometric modeler based on Sandia National Laboratories new five-level process for manufacturing microelectromechanical systems (MEMS). The modeler simulates the SUMMiT V process, a baseline [...]

Convergence and Speed Issues in Analog HDL Model Formulation for MEMS

Iyer S., Jing Q., Fedder G.K., Mukherjee T., ECE Department, Carnegie Mellon University, US

Behavioral simulation using high-level hardware description languages (HDLs) is becoming increasingly relevant for mixed-domain MEMS simulation. In this paper three issues which impact the convergence and simulation time in MEMS behavioral simulations are addressed. First, [...]

Coupled System-Level and Physical-Level Simulation

Furmanczyk M., Turowski M., Yu E., Przekwas A.J., CFD Research Corporation, US

Software tools for Mixed-Level Coupled Simulations have been developed. The system-level simulation uses the circuit theory approach, where each element of the system is modeled either through mathematical equation, or through coupling with physical-level 3D [...]

System Model for a Novel No Moving Parts Diffuser Valve Based Diaphragm Actuated Micro Pump

Banerjee D., Yano K., Bart S.F., Coventor, US

Analytical results for oscillating flow in a channel indicate regions of high shear stress close to the wall along with the flow reversal in the central portion of the flow at certain frequencies of actuation. [...]

Coupled Multiphysics and Chemistry Simulations of PCR Microreactors with Active Control

Athavale M.M., Chen Z.J., Furmanczyk M., Przekwas A.J., CFD Research Corporation, US

High-fidelity simulation tools that couple fluid flow, heat transfer and chemistry of PCR microreactors have been applied to different microreactor designs. The tools are coupled to a controller software for thermal control of the virtual [...]

The Quantum-Point-Contact Spin Filter

Gilbert M.J., Bird J.P., Arizona State University, US

We describe an electron filter that exploits the known transmission properties of quantum point contacts to allow local and tunable control of the spin polarization in a semiconductor. When properly configured, the conductance of this [...]

An Approach to Quantum Correction in Monte Carlo Device Simulation

Winstead B., Tsuchiya H., Ravaioli U., University of Illinois at Urbana-Champaign, US

A particle-based approach coupled with quantum potential corrections is very attractive for practical simulation of nanoscale semiconductor devices. We present here a quantum correction approach derived from a simplification of the Wigner function transpo

The Use of Bohm Trajectories and the Effective Potential in Probing Quantum Mechanical Behavior in 2-D and Spintronic Sub-micron Devices

Shifren L., Akis R., Ferry D.K., Arizona State University, US

We utilize an effective potential to reproduce Bohm (quantum) trajectory behavior using purely classical trajectories. The effective potential is a novel method for including certain quantum phenomena into classical simulations by projecting the non-zero dimensions [...]

Towards a Compact Scattering Model for Nanoscale MOSFETs

Rahman A., Ren Z., Rhew J-H., Lundstrom M.S., Purdue University, US

A new compact model for nanoscale MOSFETs based on scattering theory is proposed for the full range of VGS and VDS covering sub-threshold, linear and saturation regions of operation. Quantum confinement and carrier degeneracy are [...]

An Effective Potential Method for Including Quantum Effects Into the Simulation of Ultra-Short and Ultra-Narrow Channel MOSFETs

Akis R., Milicic S., Ferry D.K., Vasileska D., Arizone State University, US

Quantum effects are known to occur in the channel region of MOSFET devices, in which the carriers are confined in a triangular potential well at the semiconductor-oxide interface. Typically, these effects are quantified by a [...]