US – Page 416 – TechConnect Briefs

Electronic Properties and Transport in Silicon Nanowires

Batra I.P., Ciani T., Boddupalli D., Soberano L., University of Illinois at Chicago, US

In an integrated silicon nanotechnology environment, it may be desirable to replace metallic inter-connects like Al, with Silicon metallic wires. This motivated us to investigate the electronic and transport properties of quasi one-dimensional (1D) Silicon [...]

Initial State Preparation and Stability in Narrow Band-Gap Semiconductor Qubits

Gilbert M.J., Akis R., Ferry D.K., Arizona State University, US

The output of a quantum computing system depends on the quality of the preparation of the initial state of the qubit or qubits to be used in the subsequent computations. Here, we have defined a [...]

Quantum-Classical Transition Induced by Electrical Measurement

Mozyrsky D., Martin I., Los Alamos National Laboratory, US

A model of an electrical tunnel junction coupled to a mechanical system (oscillator) is studied to simulate the dephasing effect of measurement on a quantum system. The problem is solved at zero temperature under conditions [...]

Nanocomputer Systems Engineering

Frank M.P., University of Florida, US

Regardless of whichever precise nano-device technology ends up being most viable for general-purpose computing, the design of densely-packed computer systems comprised of nanometer-scale bit-devices offers a number of interesting new challenges for the field of [...]

Critical Current Oscillations versus Pureness of Superconductor-ferromagnet Nanoscopic Multilayers

Shafranjuk S.E., Ketterson J., Northwestern University, US

In our report we study how the oscillations and reentrant behaviour of critical parameters depends on the elastic scattering of electrons on atomic impurities in S/F multilayers. The expressions for the electric supercurrent and for [...]

Quantum-like Computation and “Thinking” Based on Classical Oscillations

Orlov Y.F., Cornell University, US

Classical systems containing decision-making elements can possess quantum-like properties, most importantly interference of probabilities of different decisions. We demonstrate this theoretically using a set of linear numbered oscillators combined with decision-making and other devices. This [...]

Switching Dynamics of Double Barrier Josephson Junction Based Qubit Gate

Shafraniuk S.E., Nevirkovets I.P., Ketterson J., Northwestern University, US

The double barrier SINIS junctions (here S, I, and N denote a superconductor, an insulator, and a normal metal, respectively) with a nanoscopic N spacer are potentially capable of performing quantum logic operations (so-called qubits) [...]

Clocked Quantum-dot Cellular Automata circuits

Kummamurui R., Orlov A., Lent C., Bernstein G., Snider G., University of Notre Dame, US

We present an experimental demonstration of novel Quantum-dot Cellular Automata (QCA) circuits utilizing clocked architecture -a QCA latch and a two-bit QCA shift register. Devices are fabricated using metal tunnel junction technology and operate at [...]

Background Charge Insensitive Single-Electron Memory Devices

Yadavalli K., Orlov A., Snider G., Likharev K., Korotkov A., University of Notre Dame, US

In a Single-Electron Memory Cell (SEMC) one bit of information is represented by the excess or shortfall of a small (¡_1) number of electrons on the floating gate (FG). We present experimental results on the [...]

Three-dimensional, Full-band, Quantum Modeling of Electron and Hole Transport Through Si/SiGe Nano-structures

Rivas C., Lake R., University of California, US

Full-band, three-dimensional (3D), atomistic, non-equilibrium Green fuction simulations are used to model Si nanowires. Full-band and single band calculations are compared. The effect of surface passivation is analyzed in the full-band simulations. Our approach to [...]